Remarkable p-type activation of heavily doped diamond accomplished by boron ion implantation at room temperature and subsequent annealing at relatively low temperatures of 1150 and 1300 °C

2019 ◽  
Vol 115 (7) ◽  
pp. 072103 ◽  
Author(s):  
Yuhei Seki ◽  
Yasushi Hoshino ◽  
Jyoji Nakata
Keyword(s):  
Ion Implantation ◽  
Low Temperatures ◽  
Room Temperature ◽  
Subsequent Annealing ◽  
Heavily Doped ◽  
P Type

Notizen: Various Donors in n-ZnSb and the Influence of Sample Treatment

1975 ◽  
Vol 30 (3) ◽  
pp. 381-382 ◽  
Author(s):  
A. Abou- Zeid ◽  
G. Schneider
Keyword(s):  
Low Temperatures ◽  
Room Temperature ◽  
Surface Effects ◽  
Sample Treatment ◽  
Temperature Range ◽  
Donor Doping ◽  
P Type

Various donor doping of ZnSb is investigated. Te-doping yields the most stable n-type crystals at room temperature; the samples show p-type behaviour at low temperatures. The influence of surface effects is demonstrated. It was possible to prepare n-type ZnSb for the whole temperature range.

GaN P-N Structures Fabricated by Mg ION Implantation

1998 ◽  
Vol 537 ◽  
Author(s):  
E.V. Kalinina ◽  
V.A. Solov'ev ◽  
A.S. Zubrilov ◽  
V.A. Dmitriev ◽  
A.P. Kovarsky
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Scattered Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electron Beam Induced Current ◽  
P Type ◽  
Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

Formation and Effects of Secondary Defects in Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Jack Washburn
Keyword(s):  
Activation Energy ◽  
Electron Microscope ◽  
Low Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Laser Annealing ◽  
Subsequent Annealing ◽  
Interface Migration ◽  
Kinetics Of ◽  
Ion Implanted

ABSTRACTThe clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

Ion Implantation in InSb Grown on GaAs

1990 ◽  
Vol 216 ◽  
Author(s):  
M. V. Rao ◽  
R. Echard ◽  
P. E. Thompson ◽  
A. K. Berry ◽  
S. Mulpuri ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Isothermal Annealing ◽  
Gaas Substrates ◽  
Doping Behavior ◽  
P Type

ABSTRACTBe, S, Si, and Ne implantations were performed at room temperature into InSb layers grown on undoped semi-insulating GaAs substrates. The implant damage in InSb is of ntype behavior. The implanted material was subjected to both isochronal and isothermal annealing schemes using a molybdenum strip heater. A maximum p-type activation of 90 % and si-type activation of 16 % was achieved for Be and S implants, respectively. Si implant has an amphoteric doping behavior.

scholarly journals Техника электрохимического вольт-фарадного профилирования сильно легированных структур с резким профилем распределения примеси

2019 ◽  
Vol 53 (2) ◽  
pp. 281 ◽  
Author(s):  
Д.С. Фролов ◽  
Г.Е. Яковлев ◽  
В.И. Зубков
Keyword(s):  
Ion Implantation ◽  
Doping Profile ◽  
Electrochemical Capacitance ◽  
Optimal Measurement ◽  
Type Silicon ◽  
Capacitance Voltage ◽  
Silicon Structures ◽  
Heavily Doped ◽  
P Type ◽  
Selection Of

AbstractThe specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal measurement parameters, and the necessity of increasing the frequency, at which the capacitance is measured during profiling, is substantiated. The described procedure is considered by the example of profiling p -type silicon structures with ion implantation as well as n -GaAs epitaxial and substrate structures for p HEMT devices.

scholarly journals GaN p-n Structures Fabricated by Mg Ion Implantation

1999 ◽  
Vol 4 (S1) ◽  
pp. 751-756 ◽  
Author(s):  
E.V. Kalinina ◽  
V.A. Solov’ev ◽  
A.S. Zubrilov ◽  
V.A. Dmitriev ◽  
A.P. Kovarsky
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Scattered Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electron Beam Induced Current ◽  
P Type ◽  
Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2×1016 cm−2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

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