Ion Implantation in InSb Grown on GaAs

1990 ◽  
Vol 216 ◽  
Author(s):  
M. V. Rao ◽  
R. Echard ◽  
P. E. Thompson ◽  
A. K. Berry ◽  
S. Mulpuri ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Isothermal Annealing ◽  
Gaas Substrates ◽  
Doping Behavior ◽  
P Type

ABSTRACTBe, S, Si, and Ne implantations were performed at room temperature into InSb layers grown on undoped semi-insulating GaAs substrates. The implant damage in InSb is of ntype behavior. The implanted material was subjected to both isochronal and isothermal annealing schemes using a molybdenum strip heater. A maximum p-type activation of 90 % and si-type activation of 16 % was achieved for Be and S implants, respectively. Si implant has an amphoteric doping behavior.

GaN P-N Structures Fabricated by Mg ION Implantation

1998 ◽  
Vol 537 ◽  
Author(s):  
E.V. Kalinina ◽  
V.A. Solov'ev ◽  
A.S. Zubrilov ◽  
V.A. Dmitriev ◽  
A.P. Kovarsky
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Scattered Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electron Beam Induced Current ◽  
P Type ◽  
Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

scholarly journals Углеродные пленки, полученные импульсным лазерным методом, и их влияние на свойства GaAs-структур

2020 ◽  
Vol 54 (9) ◽  
pp. 868
Author(s):  
Ю.А. Данилов ◽  
М.В. Ведь ◽  
О.В. Вихрова ◽  
Н.В. Дикарева ◽  
М.Н. Дроздов ◽  
...  
Keyword(s):  
Deposition Temperature ◽  
Room Temperature ◽  
Pyrolytic Graphite ◽  
Pulsed Laser ◽  
Gaas Substrates ◽  
Nanocrystalline Graphite ◽  
Transparent Coating ◽  
P Type ◽  
Ingaas Quantum Well ◽  
Semiconductor Type

Abstract The properties of carbon layers produced on GaAs substrates by the pulsed laser sputtering of pyrolytic graphite in vacuum are studied. The optimal deposition temperature is 500°C; in this case, the growth rate of carbon layers is 0.19 nm s^–1. The Raman spectra correspond to the spectrum of nanocrystalline graphite. The carbon layers possess p -type conductivity, exhibit a semiconductor-type temperature dependence of the resistance, and are used as a conductive transparent coating of GaAs structures with an InGaAs quantum well. The structures show noticeable electroluminescence even at small pump currents and are photosensitive in the range 1.5–2.2 eV at up to room temperature of measurements.

Formation of AlGaAs by ion beam mixing of Al films on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 690-691
Author(s):  
R.S. Deol ◽  
E.A. Kamil ◽  
K.P. Homewood ◽  
T. Kobayashi
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Ion Beam ◽  
Chamber Pressure ◽  
Pure Aluminium ◽  
Material Synthesis ◽  
Ion Beam Mixing ◽  
Implantation Energy ◽  
Gaas Substrates ◽  
Heated Filament

There is considerable interest in the use of ion implantation for material synthesis. The synthesis of AlGaAs by dual implants of As+ and Al+ into GaAs followed by rapid thermal annealing (RTA) has been reported recently. In this paper results relating to the formation of AlxGa1-xAs by depositing thin Al films on GaAs substrates and irradiating with arsenic ions followed by RTA are presented.Aluminium layers of 580Å or 650Å in thickness were deposited onto liquid encapsulated Czochralski (LEC) grown samples of semi-insulating <100> GaAs. The deposition was done using pure aluminium on a heated filament at a chamber pressure of ∽10−6 Torr with the thickness being measured using a talystep. Subsquently As+ implants were performed at room temperature using an energy of 150, 200 or 300 keV and a dose of 3x1016 or 1x1017 cm−2. The implantation energy was selected to ensure that the projected depth exceeded the thickness of the Al overlayer employed.

scholarly journals GaN p-n Structures Fabricated by Mg Ion Implantation

1999 ◽  
Vol 4 (S1) ◽  
pp. 751-756 ◽  
Author(s):  
E.V. Kalinina ◽  
V.A. Solov’ev ◽  
A.S. Zubrilov ◽  
V.A. Dmitriev ◽  
A.P. Kovarsky
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Implantation Dose ◽  
Electrical Characteristics ◽  
Scattered Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Electron Beam Induced Current ◽  
P Type ◽  
Secondary Ion

AbstractIn this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2×1016 cm−2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 313-317
Author(s):  
Jayantha Senawiratne ◽  
Jeffery S. Cites ◽  
James G. Couillard ◽  
Johannes Moll ◽  
Carlo A. Kosik Williams ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Isothermal Annealing ◽  
Deep Level ◽  
Conduction Band Edge ◽  
Strong Reduction ◽  
Deep Traps ◽  
Defect Sites ◽  
Transient Spectroscopy ◽  
Photocurrent Measurement ◽  
P Type

Electrically active defects induced by ion implantation of boron and phosphorus into silicon and their recovery under isothermal annealing at 450 °C were investigated using Deep Level Transient Spectroscopy (DLTS) and Energy Resolved Tunneling Photoconductivity (ERTP) spectroscopy at cryogenic temperatures. DLTS results show electrically active deep traps located at Ev+0.35 eV and Ev+0.53 eV in boron implanted Si and at Ev+0.34 eV, Ev+0.43 eV, and Ev+0.38 eV in phosphorus implanted Si. These meta-stable defect sites were found to be either eliminated or significantly reduced in thermally annealed samples. We assigned these defect sites to hydrogen and carbon incorporated complexes formed during ion implantation. Corroborating the DLTS results, the photocurrent measurement also revealed a strong reduction of electrically active defects states, extended from EC – 0.3 eV up to the conduction band edge of Si, upon isothermal annealing.

Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

2021 ◽  
pp. 150274
Author(s):  
Adriano Panepinto ◽  
Arnaud Krumpmann ◽  
David Cornil ◽  
Jérôme Cornil ◽  
Rony Snyders
Keyword(s):  
Ion Implantation ◽  
Electrical Characteristics ◽  
P Type
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