Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H

2018 ◽  
Vol 113 (19) ◽  
pp. 191901 ◽  
Author(s):  
K. Shima ◽  
H. Iguchi ◽  
T. Narita ◽  
K. Kataoka ◽  
K. Kojima ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Room Temperature Photoluminescence ◽  
Photoluminescence Lifetime ◽  
P Type

The compositional and optical characterizations of InGaAsN alloy semiconductor grown by MOVPE

2002 ◽  
Vol 744 ◽  
Author(s):  
Sakuntam Sanorpim ◽  
Fumihiro Nakajima ◽  
Ryuji Katayama ◽  
Kentaro Onabe ◽  
Yashihiro Shiraki
Keyword(s):  
Room Temperature ◽  
Excitation Power ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Optical Investigation ◽  
Edge Emission ◽  
Alloy Films ◽  
Pl Spectra

ABSTRACTWe report on the compositional and optical investigation of InGaAs(N) alloy films grown on GaAs (001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). The alloy films with the room-temperature photoreflactance (PR) signal (Eo transition) wavelength range of 0.98–1.36 m have been grown. The variation in PL characteristics of the InGaAs(N) alloy films has been investigated as a function of alloy composition, excitation power and temperature. At low temperatures (T<100K), the PL spectra with several sub-peaks include localization emission as well as near-band-edge emission. On the other hand, the room-temperature PL properties for InxGa1-xAs1-yNy (x = 10.5% and 17.0% and y < 2%) are excellent with a single near-band-edge emission peak corresponding to their own Eo transition. The evolution of PL spectra with excitation power and temperature led to an insight into the nature of the near-band-edge states. The temperature dependence of integrated PL intensity indicates the presence of a large density of non-radiative recombination centers, showing a behavior characterized by two activation energies. Our results suggest that the origin of localization in InGaAsN alloy films is the alloy inhomogeneities of both In and N, which may results in the characteristic carrier dynamics.

Stable enhancement of near-band-edge emission of ZnO nanowires by hydrogen incorporation

2010 ◽  
Vol 21 (6) ◽  
pp. 065709 ◽  
Author(s):  
A Dev ◽  
R Niepelt ◽  
J P Richters ◽  
C Ronning ◽  
T Voss
Keyword(s):  
Zno Nanowires ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Hydrogen Incorporation

Enhancement of the near-band-edge emission of CuI by Cl doping

2019 ◽  
Vol 205 ◽  
pp. 337-341 ◽  
Author(s):  
Fengrui Li ◽  
Mu Gu ◽  
Xiaolin Liu ◽  
Shuangqiang Yue ◽  
Jiajie Zhu ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

Enhanced near-band-edge emission from a-plane ZnO thin films on SrTiO3 substrates

2015 ◽  
Vol 121 (1) ◽  
pp. 17-21 ◽  
Author(s):  
Guangheng Wu ◽  
Xiang Li ◽  
Meifeng Liu ◽  
Zhibo. Yan ◽  
Jun-Ming Liu
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

Liquid‐phase epitaxy of heavily Mg‐doped GaAs: Formation of a new near‐band‐edge emission exclusively pertinent to acceptor impurities

1987 ◽  
Vol 62 (8) ◽  
pp. 3212-3215 ◽  
Author(s):  
Masahiko Mori ◽  
Yunosuke Makita ◽  
Yoshio Okada ◽  
Nobukazu Ohnishi ◽  
Yoshinobu Mitsuhashi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Mg Doped

Temperature-dependent shifts of near band-edge emission and their second-order diffraction for ZnO nanorods

2012 ◽  
Vol 34 (11) ◽  
pp. 1917-1920 ◽  
Author(s):  
Jianguo Lv ◽  
Changlong Liu ◽  
Wanbing Gong ◽  
Zhenfa Zi ◽  
Xiaoshuang Chen ◽  
...  
Keyword(s):  
Zno Nanorods ◽  
Second Order ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Temperature Dependent ◽  
Edge Emission ◽  
Order Diffraction

Near band-edge emission in strained MBE-grown ZnS

1996 ◽  
Vol 159 (1-4) ◽  
pp. 89-93 ◽  
Author(s):  
K.B. Ozanyan ◽  
L. May ◽  
J.E. Nicholls ◽  
J.H.C. Hogg ◽  
W.E. Hagston ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission
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