Formation and Effects of Secondary Defects in Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Jack Washburn
Keyword(s):  
Activation Energy ◽  
Electron Microscope ◽  
Low Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Laser Annealing ◽  
Subsequent Annealing ◽  
Interface Migration ◽  
Kinetics Of ◽  
Ion Implanted

ABSTRACTThe clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

Oxidation Kinetics of Ge+-Ion Implanted Si

1987 ◽  
Vol 105 ◽  
Author(s):  
O. W. Holland ◽  
C. W. White ◽  
D. Fathy
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Oxidation Kinetics ◽  
Kinetic Data ◽  
Anomalous Behavior ◽  
Steam Oxidation ◽  
Oxidation Rates ◽  
Kinetics Of ◽  
Ion Implanted

AbstractKinetic data are provided for oxidation of Ge+-ion implanted Si over a range of temperature and oxidation ambient. Oxidation rates were enhanced in implanted Si and, over most of the range studied, found to be consistent with a modified reaction at the oxide/Si interface. However, this reaction is shown to be more complex than in virgin Si and could not be represented by a single activation energy. An anomalous behavior is exhibited at low-temperature for steam oxidation. This behavior is characterized and the mechanisms which are responsible are discussed.

On the use of Ozawa/Flynn/Wall method to determine aging activation energy for elastomers

2021 ◽  
pp. 009524432110203
Author(s):  
Sudhir Bafna
Keyword(s):  
Mechanical Properties ◽  
Activation Energy ◽  
Weight Loss ◽  
Oxygen Consumption ◽  
Dwell Time ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Degradation Mechanism ◽  
Kinetics Of ◽  
Wall Method

It is often necessary to assess the effect of aging at room temperature over years/decades for hardware containing elastomeric components such as oring seals or shock isolators. In order to determine this effect, accelerated oven aging at elevated temperatures is pursued. When doing so, it is vital that the degradation mechanism still be representative of that prevalent at room temperature. This places an upper limit on the elevated oven temperature, which in turn, increases the dwell time in the oven. As a result, the oven dwell time can run into months, if not years, something that is not realistically feasible due to resource/schedule constraints in industry. Measuring activation energy (Ea) of elastomer aging by test methods such as tensile strength or elongation, compression set, modulus, oxygen consumption, etc. is expensive and time consuming. Use of kinetics of weight loss by ThermoGravimetric Analysis (TGA) using the Ozawa/Flynn/Wall method per ASTM E1641 is an attractive option (especially due to the availability of commercial instrumentation with software to make the required measurements and calculations) and is widely used. There is no fundamental scientific reason why the kinetics of weight loss at elevated temperatures should correlate to the kinetics of loss of mechanical properties over years/decades at room temperature. Ea obtained by high temperature weight loss is almost always significantly higher than that obtained by measurements of mechanical properties or oxygen consumption over extended periods at much lower temperatures. In this paper, data on five different elastomer types (butyl, nitrile, EPDM, polychloroprene and fluorocarbon) are presented to prove that point. Thus, use of Ea determined by weight loss by TGA tends to give unrealistically high values, which in turn, will lead to incorrectly high predictions of storage life at room temperature.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation

1987 ◽  
Vol 97 ◽  
Author(s):  
Tadamasa Kimura ◽  
Hiroyuki Yamaguchi ◽  
Shigemi Yugo ◽  
Yoshio Adachi
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Infrared Absorption ◽  
Formation Process ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Infrared Absorption Spectroscopy ◽  
Energetic Ions ◽  
Mixed Layers ◽  
Post Implantation

ABSTRACTThe β-SiC formation process through post-implantation annealing of Si-C mixtures fabricated on Si by C-ion implantation at room temperature is studied by means of infrared absorption spectroscopy. It is shown that the formation of B-SiC from the Si-C mixtures is greatly enhanced by the subsequent irradiation of other energetic ions prior to the thermal annealing. The continuous amorphization of the Si-C mixed layers is considered to be the dominant cause for the enhancement of the B-SiC formation. The activation energy of the β-SiC formation process which is 5.3 eV without irradiation is reduced to 4.0 eV by the irradiation of 150 keV, 1 × 1017/cm2 Ar ions.

DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature

2002 ◽  
Vol 744 ◽  
Author(s):  
Takahide Sugiyama ◽  
Masayasu Ishiko ◽  
Shigeki Kanazawa ◽  
Yutaka Tokuda
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Room Temperature ◽  
Reverse Bias ◽  
Thermal Emission ◽  
Sample Temperature ◽  
Zero Bias ◽  
Type Silicon ◽  
Projected Range ◽  
Hydrogen Implantation

ABSTRACTMetastable defects are discovered in hydrogen-implanted n-type silicon. Hydrogen implantation was performed with the energy of 80 keV to a dose of 2×10 cm- at 109 K. After implantation, the sample temperature was raised to room temperature. DLTS measurements were carried out in the temperature range 80–290 K for fabricated diodes. When the sample is reverse-biased at 10V for 10 min at room temperature and then is cooled down to 80 K, three new peaks labeled EM1, EM2 and EM3 appear around 150, 190 and 240 K, respectively. The introduction of metastable defects is found to be characteristic of low temperature implantation. We have evaluated properties of EM1 in detail. EM1 with thermal emission activation energy of 0.29 eV has a peak in concentration around the depth of 0.64 μ m, which corresponds to the projected range of 80 keV hydrogen. EM1 is regenerated with the reverse bias applied around 270 K and is removed with the zero bias around 220 K.

Ge Nanocrystal Formed Directly by High-Dose-Ion-Implantation and the Related UV-VIS Photoluminescence

2003 ◽  
Vol 792 ◽  
Author(s):  
Yingqiu Zeng ◽  
Tiecheng Lu ◽  
Ping Zou ◽  
Sha Zhu ◽  
Lumin Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Compressive Stress ◽  
Formation Mechanism ◽  
Subsequent Annealing ◽  
Threshold Dose ◽  
High Dose ◽  
Annealing Zone ◽  
Ion Implanted

ABSTRACTThe investigation of nanocrystalline Ge (nc-Ge) directly prepared with high dose Ge ion implantation of 1×1016, 1×1017, 5×1017 and 1×1018cm-2 respectively without subsequent annealing is presented in this paper. The specimens were measured by means of GIXRD, LRS and PL. The results show the nc-Ge, which possesses strong compressive stress, can be fabricated when the implanting dose of Ge ions is over the threshold dose∼1×1017cm-2. The content and size of nc-Ge will enlarge with increasing dose. The nc-Ge formation mechanism may be the Ge atoms in the amorphous Ge (a-Ge) clusters, which are formed through the aggregation of implanted Ge ions, obtain energy from the instant local annealing zone induced by the incident Ge ion and reconstruct to nc-Ge existing in a-Ge clusters. The PL results indicate the strong PL peaks centered at about 295, 400 and 570 nm can be observed in implanted samples. The intensity of these PL peaks increases with increasing dose. The related PL mechanism in Ge-ion-implanted SiO2 film has also been discussed.

Ion Implantation Monitoring of GaAs Using Thermal Waves

1993 ◽  
Vol 316 ◽  
Author(s):  
R. Garcia ◽  
E. J. Jaquez ◽  
R.J. Culbertson ◽  
C. D'Acosta ◽  
C. Jasper
Keyword(s):  
Activation Energy ◽  
Thermal Properties ◽  
Ion Implantation ◽  
Diffusion Process ◽  
Thermal Wave ◽  
Room Temperature ◽  
Implantation Dose ◽  
Thermal Waves ◽  
Crystal Imperfections ◽  
Logarithmic Decay

ABSTRACTLaser modulated thermoreflectivity, also called thermal wave technology, has been used in recent years to monitor ion implantation dose by monitoring the damage due to implantation. The thermal properties which are affected by lattice perturbations and other crystal imperfections are tracked by this technique. A gauge capability study was performed on the Thermawave TP300 for monitoring ion implantation of GaAs wafers. The results are presented. In order to determine the sensitivity of the technique to changes in dose, a matrix of GaAs and Si wafers was measured. During this study a downward trend was observed in the repeatability of our results. It is shown that damage to a sample during implantation will relax to a certain degree at room temperature. This damage relaxation can take up to 80 hours at room temperature and can be observed using thermal waves. It is shown that “hot wafer decay” follows a logarithmic decay which is indicative of a diffusion process. At 180°C the decay lasts less than 1 minute which indicates that the defects causing this phenomenon have a low activation energy.

Doping of GaN by ion implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

AbstractIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 °C occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 µm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

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