Impact of carrier diffusion on internal quantum efficiency of InGaN quantum well structures

2022 ◽  
Author(s):  
Kazimieras Nomeika ◽  
Žydrūnas Podlipskas ◽  
Mariamija Nikitina ◽  
Saulius nargelas ◽  
Gintautas Tamulaitis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Large Set ◽  
Carrier Diffusion ◽  
Quantum Well Structures

Internal quantum efficiency (IQE) is studied in a large set of polar and non-polar InGaN/GaN quantum well structures, 57 samples in total. In search for universal factors limiting IQE, the...

scholarly journals Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097169 ◽  
Author(s):  
Daisuke Iida ◽  
Ahmed Fadil ◽  
Yuntian Chen ◽  
Yiyu Ou ◽  
Oleksii Kopylov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Ag Nanoparticles ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Quantum Well Structures

Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

2006 ◽  
Vol 88 (19) ◽  
pp. 191108 ◽  
Author(s):  
D. Fuhrmann ◽  
T. Retzlaff ◽  
U. Rossow ◽  
H. Bremers ◽  
A. Hangleiter ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Quantum Well Structures

scholarly journals Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1736 ◽  
Author(s):  
George Christian ◽  
Menno Kappers ◽  
Fabien Massabuau ◽  
Colin Humphreys ◽  
Rachel Oliver ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Thermionic Emission ◽  
Radiative Recombination Rate ◽  
Quantum Well Structures ◽  
Si Doped

In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures

2007 ◽  
Author(s):  
Ding Ding ◽  
Shane R. Johnson ◽  
Jiang-Bo Wang ◽  
Shui-Qing Yu ◽  
Yong-Hang Zhang
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Spontaneous Emission ◽  
Quantum Well Structures

Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Spatial Separation ◽  
Wave Functions ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Lower Temperature

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

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