scholarly journals Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

2014 ◽  
Vol 116 (23) ◽  
pp. 235703 ◽  
Author(s):  
Satoshi Kurai ◽  
Koji Anai ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Yoichi Yamada
Keyword(s):  
Quantum Well ◽  
Concentration Dependence ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Structural Inhomogeneities ◽  
Si Doped

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

scholarly journals Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

2016 ◽  
Vol 24 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Q. Zhou ◽  
M. Xu ◽  
H. Wang
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Visible Light Communication ◽  
Multiple Quantum ◽  
Internal Electric Field ◽  
Light Emitting ◽  
Green Led

In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called “green gap”. This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

scholarly journals A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

2016 ◽  
Vol 119 (5) ◽  
pp. 055708 ◽  
Author(s):  
M. J. Davies ◽  
S. Hammersley ◽  
F. C.-P. Massabuau ◽  
P. Dawson ◽  
R. A. Oliver ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Si Doped

Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions

2008 ◽  
Vol 5 (6) ◽  
pp. 2161-2163 ◽  
Author(s):  
Te-Chung Wang ◽  
Tsung-Shine Ko ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
Run-Ci Gao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum

scholarly journals Internal quantum efficiency of InGaN/GaN multiple quantum well

2014 ◽  
Vol 63 (12) ◽  
pp. 127801
Author(s):  
Wang Xue-Song ◽  
Ji Zi-Wu ◽  
Wang Hui-Ning ◽  
Xu Ming-Sheng ◽  
Xu Xian-Gang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum-well hybrid structures

2012 ◽  
Vol 101 (6) ◽  
pp. 061905 ◽  
Author(s):  
Huei-Min Huang ◽  
Chiao-Yun Chang ◽  
Yueh-Shan Hsu ◽  
Tien-Chang Lu ◽  
Yu-Pin Lan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Hybrid Structures ◽  
Multiple Quantum
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