Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness
Keyword(s):
High-density V-shaped pits cause that InGaN/GaN multi-quantum well becomes QD/QW hybrid structure, and the internal quantum efficiency of the hybrid structure is improved by increasing the thickness of GaN barrier.
2014 ◽
Vol 53
(6S)
◽
pp. 06JE14
◽
2009 ◽
Vol 55
(1)
◽
pp. 271-274
◽
Keyword(s):