scholarly journals Understanding the switching mechanism of interfacial phase change memory

2019 ◽  
Vol 125 (18) ◽  
pp. 184501 ◽  
Author(s):  
Kye L. Okabe ◽  
Aditya Sood ◽  
Eilam Yalon ◽  
Christopher M. Neumann ◽  
Mehdi Asheghi ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Switching Mechanism ◽  
Interfacial Phase ◽  
Change Memory

Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

Nanoscale ◽  
2017 ◽  
Vol 9 (27) ◽  
pp. 9386-9395 ◽  
Author(s):  
Hisao Nakamura ◽  
Ivan Rungger ◽  
Stefano Sanvito ◽  
Nobuki Inoue ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Phase Change ◽  
Resistive Switching ◽  
Theoretical Study ◽  
Phase Change Memory ◽  
Two Dimensional ◽  
Topological Properties ◽  
Switching Mechanism ◽  
Interfacial Phase ◽  
Change Memory ◽  
Resistive Switching Mechanism

A theoretical study of an interfacial phase change memory made of a GeTe–Sb2Te3 superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism.

scholarly journals Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory

2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Transition Metal ◽  
Phase Change ◽  
Topological Insulators ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Metal Dichalcogenides ◽  
Superlattice Structures ◽  
Change Memory

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Small ◽  
2018 ◽  
Vol 14 (24) ◽  
pp. 1704514 ◽  
Author(s):  
Philippe Kowalczyk ◽  
Françoise Hippert ◽  
Nicolas Bernier ◽  
Cristian Mocuta ◽  
Chiara Sabbione ◽  
...  
Keyword(s):  
Phase Change ◽  
Van Der Waals ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Avalanche atomic switching in strain engineered Sb2Te3–GeTe interfacial phase-change memory cells

Nano Futures ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 025003 ◽  
Author(s):  
Xilin Zhou ◽  
Jitendra K Behera ◽  
Shilong Lv ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Interfacial Phase ◽  
Change Memory

scholarly journals Weyl node assisted conductivity switch in interfacial phase-change memory with van der Waals interfaces

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
Jinwoong Kim ◽  
Jeongwoo Kim ◽  
Young-Sun Song ◽  
Ruqian Wu ◽  
Seung-Hoon Jhi ◽  
...  
Keyword(s):  
Phase Change ◽  
Van Der Waals ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory
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