Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states
Keyword(s):
A theoretical study of an interfacial phase change memory made of a GeTe–Sb2Te3 superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism.
2018 ◽
Vol 57
(4S)
◽
pp. 04FE08
◽
Keyword(s):
2018 ◽
Vol 57
(4S)
◽
pp. 04FE06
◽
2019 ◽
Vol 91
(11)
◽
pp. 1777-1786
◽