scholarly journals Weyl node assisted conductivity switch in interfacial phase-change memory with van der Waals interfaces

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
Jinwoong Kim ◽  
Jeongwoo Kim ◽  
Young-Sun Song ◽  
Ruqian Wu ◽  
Seung-Hoon Jhi ◽  
...  
Keyword(s):  
Phase Change ◽  
Van Der Waals ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

scholarly journals Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory

2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Transition Metal ◽  
Phase Change ◽  
Topological Insulators ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Metal Dichalcogenides ◽  
Superlattice Structures ◽  
Change Memory

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Small ◽  
2018 ◽  
Vol 14 (24) ◽  
pp. 1704514 ◽  
Author(s):  
Philippe Kowalczyk ◽  
Françoise Hippert ◽  
Nicolas Bernier ◽  
Cristian Mocuta ◽  
Chiara Sabbione ◽  
...  
Keyword(s):  
Phase Change ◽  
Van Der Waals ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Avalanche atomic switching in strain engineered Sb2Te3–GeTe interfacial phase-change memory cells

Nano Futures ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 025003 ◽  
Author(s):  
Xilin Zhou ◽  
Jitendra K Behera ◽  
Shilong Lv ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Interfacial Phase ◽  
Change Memory

Structural transition pathway and bipolar switching of the GeTe–Sb2Te3 superlattice as interfacial phase-change memory

2019 ◽  
Vol 213 ◽  
pp. 303-319 ◽  
Author(s):  
Nobuki Inoue ◽  
Hisao Nakamura
Keyword(s):  
Phase Change ◽  
High Resistance ◽  
Structural Transition ◽  
Phase Change Memory ◽  
High Resistance State ◽  
Interfacial Phase ◽  
Bipolar Switching ◽  
Resistance State ◽  
Change Memory ◽  
Resistive Switching Mechanism

We investigated the resistive switching mechanism between the high-resistance state (HRS) and the low-resistance state (LRS) of the GeTe–Sb2Te3 (GST) superlattice.

scholarly journals Understanding the switching mechanism of interfacial phase change memory

2019 ◽  
Vol 125 (18) ◽  
pp. 184501 ◽  
Author(s):  
Kye L. Okabe ◽  
Aditya Sood ◽  
Eilam Yalon ◽  
Christopher M. Neumann ◽  
Mehdi Asheghi ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Switching Mechanism ◽  
Interfacial Phase ◽  
Change Memory

scholarly journals Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1268
Author(s):  
Shinyoung Kang ◽  
Juyoung Lee ◽  
Myounggon Kang ◽  
Yunheub Song
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Long Term Potentiation ◽  
Interfacial Phase ◽  
Artificial Synapse ◽  
Electrode Contact ◽  
Contact Size ◽  
Change Memory

In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb2Te3 alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb2Te3 (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.

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