Dependence of electromigration failure modes on EM-induced and thermally-induced mechanical stress in interconnect lines

1996 ◽  
Author(s):  
S. Pramanick ◽  
D. D. Brown ◽  
V. Pham ◽  
P. Besser ◽  
J. Sanchez ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Failure Modes ◽  
Thermally Induced ◽  
Interconnect Lines

Effect of Mechanical Stress on Electromigration Failure Mode During Accelerated Electromigration Tests

1994 ◽  
Vol 356 ◽  
Author(s):  
S. Pramanick ◽  
D. D. Brown ◽  
V. Pham ◽  
P. Besser ◽  
J. Sanchez ◽  
...  
Keyword(s):  
Stress State ◽  
Mechanical Stress ◽  
Failure Mode ◽  
Current Density ◽  
Failure Modes ◽  
High Current Density ◽  
Mode Selection ◽  
High Current ◽  
Stress States ◽  
Interconnect Lines

AbstractThe electromigration failure mode and failure rate during accelerated electromigration testing is expected to be strongly affected by the mechanical stress state of Al lines, since tensile stress and compressive stress states favor void growth and hillock formations (extrusions), respectively. During electromigration testing, the mechanical stress state or evolution of mechanical stress of an interconnect is a function of current density and temperature, the two principal variables in electromigration testing. In our experiments, we have observed two different electromigration failure modes by varying the current density and temperatures where (i) the passivated Al lines tested at high current density and high temperatures failed by extrusion or hillock type failure and (ii) the interconnect lines tested at low current density and moderate temperature failed by voiding. A mechanical stress model which incorporates both the thermally generated stress and electromigration induced mechanical stress is invoked to explain the electromigration failure mode selection observed in our experiments.

Thermally Induced Delamination Buckling of a Thin Metal Layer on a Ceramic Substrate

2003 ◽  
Vol 125 (4) ◽  
pp. 512-519 ◽  
Author(s):  
C. J. Liu ◽  
L. J. Ernst ◽  
G. Wisse ◽  
G. Q. Zhang ◽  
M. Vervoort
Keyword(s):  
Failure Modes ◽  
Research Effort ◽  
Metal Layer ◽  
Electronic Packages ◽  
Ceramic Substrates ◽  
Thermally Induced ◽  
Thermal Expansion Coefficients ◽  
Interface Delamination ◽  
Delamination Buckling ◽  
Expansion Coefficients

Interface delamination failure caused by thermomechanical loading and mismatch of thermal expansion coefficients and other material properties is one of the important failure modes occurring in electronic packages, thus a threat for package reliability. To solve this problem, both academic institutions and industry have been spending tremendous research effort in order to understand the inherent failure mechanisms and to develop advanced and reliable experimental and simulation methodologies, thus to be able to predict and to avoid interface delamination before physical prototyping. Various damage mechanisms can be involved and can result in interface delamination phenomena. These are not all sufficiently addressed and/or reported so far, probably because of the complexities caused by the occurrence of strong geometric and materials nonlinearities. One of the phenomena being insufficiently understood so far is the so-called buckling-driven delamination of thin metalic layers on ceramic substrates. This phenomenon will be discussed in the present paper.

Failure Prediction of Flip Chip Packages Using Finite Element Technique

2002 ◽  
Author(s):  
Abm Hasan ◽  
H. Mahfuz ◽  
M. Saha ◽  
S. Jeelani
Keyword(s):  
Finite Element ◽  
Flip Chip ◽  
Thermal Loading ◽  
Failure Modes ◽  
Element Model ◽  
Thermally Induced ◽  
Operational Life ◽  
Flip Chip Assembly ◽  
The Individual ◽  
Element Technique

Flip-chip electronic package undergoes thermal loading during its curing process and operational life. Due to the thermal expansion coefficient (CTE) mismatch of various components, the flip-chip assembly experiences various types of thermally induced stresses and strains. Experimental measurement of these stresses and strains is extremely tedious and rigorous due to the physical limitations in the dimensions of the flip-chip assembly. While experiments provide accurate assessment of stresses and strains at certain locations, a parallel finite element (FE) analysis and analytical study can complementarily determine the displacement, strain and stress fields over the entire region of the flip-chip assembly. Such combination of experimental, finite element and analytical studies are ideal to yield a successful stress analysis of the flip-chip assembly under the various loading conditions. In this study, a two-dimensional finite element model of the flip-chip consisting of the silicon chip, underfill, solder ball, copper pad, solder mask and substrate has been developed. Various stress components under thermal loading condition ranging from −40°C to 150°C have been determined using both the finite element and analytical methods. Stresses such as (σ11, σ12, ε12 etc. are extracted and analyzed for the individual components as well as the entire assembly, and the weakest positions of the flip-chip have been discovered. Detailed description of FE modeling is presented and the different failure modes of chip assembly are discussed.

scholarly journals Mechanically and Thermally Induced Degradation and Modification of Cereal Biopolymers during Grinding

Polymers ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 448 ◽  
Author(s):  
Sabina Paulik ◽  
Mario Jekle ◽  
Thomas Becker
Keyword(s):  
Mechanical Stress ◽  
Structural Modification ◽  
Wheat Starch ◽  
Water Addition ◽  
Scanning Calorimetry ◽  
Hydration Properties ◽  
Thermally Induced ◽  
Induced Changes ◽  
The Impact ◽  
Main Factor

It is presumed that structural and functional alterations of biopolymers, which occur during grinding, are caused by a mechanical modification of polymers. As a result, thermally induced changes of flours are neglected. In this study, the impact of thermo-mechanical stress (TMS), as occurring during general grinding procedures, was further differentiated into thermal stress (TS) and mechanical stress (MS). For TS, native wheat flour, as well as the purified polymers of wheat—starch and gluten—were heated without water addition up to 110 ∘ C. Isolated MS was applied in a temperature-controlled ultra-centrifugal grinder (UCG), whereby thermal and mechanical treatment (TMS) was simultaneously performed in a non-cooled UCG. TS starch (110 ∘ C) and reference starch did not show differences in starch modification degree (2.53 ± 0.24 g/100 g and 2.73 ± 0.15 g/100 g, AACC 76-31), gelatinization onset (52.44 ± 0.14 ∘ C and 52.73 ± 0.27 ∘ C, differential scanning calorimetry (DSC)) and hydration properties (68.9 ± 0.8% dm and 75.8 ± 3.0%, AACC 56-11), respectively. However, TS led to an elevated gelatinization onset and a rise of water absorption of flours (Z-kneader) affecting the processing of cereal-based dough. No differences were visible between MS and TMS up to 18,000 rpm regarding hydration properties (65.0 ± 2.0% dm and 66.5 ± 0.3% dm, respectively). Consequently, mechanical forces are the main factor controlling the structural modification and functional properties of flours during grinding.

Transient Thermo-Mechanical Stress Analysis of Hot Surface Probe Using Sequentially Coupled CFD-FEA Approach

2021 ◽  
Author(s):  
Sang-Guk Kang ◽  
Je Ir Ryu ◽  
Austen H. Motily ◽  
Prapassorn Numkiatsakul ◽  
Tonghun Lee ◽  
...  
Keyword(s):  
Boundary Conditions ◽  
Stress Analysis ◽  
Mechanical Stress ◽  
Failure Modes ◽  
Temperature History ◽  
Transient Temperature ◽  
Reacting Flow ◽  
Element Mesh ◽  
Surface Probe ◽  
Hot Surface

Abstract Energy addition using a hot surface probe is required for reliable ignition of aircraft compression ignition engines running on fuel variations and at altitude conditions. Thus, durability of the hot surface probe is crucial for application in these engines. Thermo-mechanical stress is one of the key parameters that determine durability, which requires an accurate prediction of the transient temperature field based on well-defined boundary conditions representing the dynamic and complex fluid flow inside engines. To meet this requirement, the present study focuses on transient thermo-mechanical stress analysis using a sequentially coupled CFD-FEA approach to understand transient thermo-mechanical responses of the hot surface probe. A 3D transient reacting flow simulation was conducted first using CONVERGE software, the results of which were exported to map thermal and pressure boundary conditions onto a structural finite element mesh. Transient thermo-mechanical stress analysis was performed sequentially using ABAQUS software utilizing the mapped boundary conditions. The results such as transient temperature history, resultant thermo-mechanical stress, displacement, potential failure modes, etc. were critically reviewed, which can provide helpful information for further design improvement.

Laser Based Defect Localization for the Failure Analysis of Advanced Product

2006 ◽  
Author(s):  
W.Y. Cheng ◽  
T.Y. Chiu ◽  
Jon C. Lee ◽  
J.Y. Chiou
Keyword(s):  
Failure Analysis ◽  
Laser Scanning ◽  
Failure Modes ◽  
Induced Voltage ◽  
Resistance Change ◽  
Thermally Induced ◽  
Defect Localization ◽  
Defect Isolation ◽  
Site Localization ◽  
Selection Of

Abstract Emission microscopy have been used for failure analysis (FA) defect isolation. But for advanced products, the working voltage of chip is getting smaller, thus many emission spots from normal transistors will be observed, which indeed affects the judgment on the emission spots from killer defects and increases the FA difficulty. Laser scanning microscope (LSM)-based techniques have been powerful defect isolation methods for many years. In this study, Checkpoint Infrascan 200TD, a laser-based tool, is used to perform defect localization. Here, thermally induced voltage alteration and optical beam induced resistance change are used to get defect locations. The study demonstrates three FA cases with 80nm/90nm technologies; metal direct short, poly leakage, and contact high resistance are also found in these cases. It is concluded that, by the selection of control parameters, Infrascan 200TD provides several capabilities of failure site localization and can be applied to different failure modes.

Qualification of bumping processes: Experimental and numerical investigations on mechanical stress and failure modes induced by shear test

2015 ◽  
Vol 55 (6) ◽  
pp. 980-989 ◽  
Author(s):  
Sébastien Gallois-Garreignot ◽  
Naceur Benzima ◽  
Etienne Benmussa ◽  
Caroline Moutin ◽  
Pierre-Olivier Bouchard ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Shear Test ◽  
Failure Modes ◽  
Numerical Investigations

Mechanical Stress Measurements in Damascene-Fabricated Aluminum Interconnect Lines

1999 ◽  
Vol 594 ◽  
Author(s):  
Paul R. Besser
Keyword(s):  
Shear Stress ◽  
Stress State ◽  
Aspect Ratio ◽  
Tensile Stress ◽  
Mechanical Stress ◽  
Hydrostatic Stress ◽  
Maximum Shear Stress ◽  
Compressive Stresses ◽  
Biaxial Tensile Stress ◽  
Interconnect Lines

AbstractThe mechanical stress state of damascene-fabricated Al interconnect lines was determined on an array of lines on the product die of a logic technology device. Narrow, unpassivated, damascene Al lines have a purely hydrostatic stress (108 MPa). The hydrostatic stress of damascene Al lines (411 MPa) is much larger once the dielectric is deposited. However, the maximum shear stress remains small in magnitude, compared to RIE Al lines of similar thermal history and aspect ratio. The stress of damascene lines was measured as a function of linewidth. Unpassivated, wide lines, have compressive stresses along the length and width and zero along the line height. Passivated wide lines have a biaxial, tensile stress in-plane and zero along the line height.

Mechanical Stresses in Aluminum and Copper Interconnect Lines for 0.18µm Logic Technologies

1999 ◽  
Vol 563 ◽  
Author(s):  
Paul R. Besser ◽  
Young-Chang Joo ◽  
Delrose Winter ◽  
Minh Van Ngo ◽  
Richard Ortega
Keyword(s):  
Stress State ◽  
Mechanical Stress ◽  
Diffraction Method ◽  
Critical Dimension ◽  
Stress And Strain ◽  
X Ray Diffraction ◽  
Materials Properties ◽  
Oxide Deposition ◽  
Interconnect Lines ◽  
Low K

AbstractThe mechanical stress state of conventional Al and damascene Cu lines of a 0.18 pm logic technology flow have been determined using a novel X-Ray diffraction method that permits measurement of stress on an array of critical-dimension lines on the product die. The effect of high density plasma oxide deposition and the influence of low-K dielectrics on the stress state of the Al lines is described. The effect of materials properties and fabrication methodology on the stress state of damascene Cu lines is shown with measurement of mechanical stress and strain in passivated lines at room temperature and during annealing. The effect of underlayer on the damascene Cu stress state is also quantified.

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