Mechanical Stresses in Aluminum and Copper Interconnect Lines for 0.18µm Logic Technologies

1999 ◽  
Vol 563 ◽  
Author(s):  
Paul R. Besser ◽  
Young-Chang Joo ◽  
Delrose Winter ◽  
Minh Van Ngo ◽  
Richard Ortega
Keyword(s):  
Stress State ◽  
Mechanical Stress ◽  
Diffraction Method ◽  
Critical Dimension ◽  
Stress And Strain ◽  
X Ray Diffraction ◽  
Materials Properties ◽  
Oxide Deposition ◽  
Interconnect Lines ◽  
Low K

AbstractThe mechanical stress state of conventional Al and damascene Cu lines of a 0.18 pm logic technology flow have been determined using a novel X-Ray diffraction method that permits measurement of stress on an array of critical-dimension lines on the product die. The effect of high density plasma oxide deposition and the influence of low-K dielectrics on the stress state of the Al lines is described. The effect of materials properties and fabrication methodology on the stress state of damascene Cu lines is shown with measurement of mechanical stress and strain in passivated lines at room temperature and during annealing. The effect of underlayer on the damascene Cu stress state is also quantified.

Process-Oriented Stress Modeling and Stress Evolution During Cu/Low-K BEOL Processing

2004 ◽  
Vol 812 ◽  
Author(s):  
Charlie Jun Zhai ◽  
Paul R. Besser ◽  
Frank Feustel
Keyword(s):  
Stress State ◽  
Mechanical Stress ◽  
Plane Stress ◽  
Cmos Technology ◽  
Film Deposition ◽  
Stress Evolution ◽  
Process Step ◽  
Dual Damascene ◽  
Process Oriented ◽  
Low K

AbstractThe damascene fabrication method and the introduction of low-K dielectrics present a host of reliability challenges to Cu interconnects and fundamentally change the mechanical stress state of Cu lines. In order to capture the effect of individual process steps on the stress evolution in the BEoL (Back End of Line), a process-oriented finite element modeling (FEM) approach was developed. In this model, the complete stress history at any step of BEoL can be simulated as a dual damascene Cu structure is fabricated. The inputs to the model include the temperature profile during each process step and materials constants. The modeling results are verified in two ways: through wafer-curvature measurement during multiple film deposition processes and with X-Ray diffraction to measure the mechanical stress state of the Cu interconnect lines fabricated using 0.13um CMOS technology. The Cu line stress evolution is simulated during the process of multi-step processing for a dual damascene Cu/low-K structure. It is shown that the in-plane stress of Cu lines is nearly independent of subsequent processes, while the out-of-plane stress increases considerably with the subsequent process steps.

Review of Residual Stress Determination and Exploitation Techniques Using X-Ray Diffraction Method

2006 ◽  
Vol 524-525 ◽  
pp. 229-234
Author(s):  
M. Belassel ◽  
J. Pineault ◽  
M.E. Brauss
Keyword(s):  
Residual Stress ◽  
Diffraction Method ◽  
Point Of View ◽  
Stress And Strain ◽  
Stress Determination ◽  
Calculation Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
True Meaning ◽  
The Difference

Although x-ray diffraction techniques have been applied to the measurement of residual stress in the industry for decades, some of the related details are still unclear to many production and mechanical testing engineers working in the field. This is because these details, specifically those associated with the transition between diffraction and mechanics, are not always emphasized in the literature. This paper will emphasize the appropriate calculation methods and the steps necessary to perform high quality residual stress measurements. Additionally, details are given regarding the difference between mechanical and x-ray elastic constants, as well as the true meaning of stress and strain from both diffraction and strain gage point of view. Cases where the material is subject to loading above the yield limit are also included.

Mechanical strain evolution in Cu/low K interconnect lines

2003 ◽  
Vol 795 ◽  
Author(s):  
Paul R. Besser ◽  
Qing-Ting Jiang
Keyword(s):  
Room Temperature ◽  
Mechanical Strain ◽  
X Ray Diffraction ◽  
Small Perturbations ◽  
X Ray ◽  
Measured Strain ◽  
Cu Interconnect ◽  
Interconnect Lines ◽  
Low K ◽  
Insight Into

ABSTRACTThe mechanical stresses in Cu interconnect lines arise from thermal expansion (CTE) differences, and the magnitude of the stress can be calculated based on the measured strain. In the current work, the strain (and stress) state of narrow Cu lines fabricated in oxide and porous organic spin-on dielectrics (low K) has been determined with X-Ray diffraction (XRD) during annealing. The room temperature stress along the length (X) and width (Y) of the lines are not dramatically different while the Z component is somewhat smaller with the spin-on ILD. These small perturbations in the magnitude of the Cu stress do not reflect the dramatic differences in the CTE. More insight into the materials system is obtained by studying the strain-temperature behavior, which illustrates the effect of the ILD clearly. The X strain is similar in magnitude and variation with temperature for both ILDs, supporting strain being imposed by the substrate. However, the Z strain is compressive at RT and linearly increases with temperature for Cu in low K, reflecting the lack of constraint by the ILD and the higher CTE of the ILD.

Mechanical Stress Measurements in Damascene-Fabricated Aluminum Interconnect Lines

1999 ◽  
Vol 594 ◽  
Author(s):  
Paul R. Besser
Keyword(s):  
Shear Stress ◽  
Stress State ◽  
Aspect Ratio ◽  
Tensile Stress ◽  
Mechanical Stress ◽  
Hydrostatic Stress ◽  
Maximum Shear Stress ◽  
Compressive Stresses ◽  
Biaxial Tensile Stress ◽  
Interconnect Lines

AbstractThe mechanical stress state of damascene-fabricated Al interconnect lines was determined on an array of lines on the product die of a logic technology device. Narrow, unpassivated, damascene Al lines have a purely hydrostatic stress (108 MPa). The hydrostatic stress of damascene Al lines (411 MPa) is much larger once the dielectric is deposited. However, the maximum shear stress remains small in magnitude, compared to RIE Al lines of similar thermal history and aspect ratio. The stress of damascene lines was measured as a function of linewidth. Unpassivated, wide lines, have compressive stresses along the length and width and zero along the line height. Passivated wide lines have a biaxial, tensile stress in-plane and zero along the line height.

Effect of Mechanical Stress on Electromigration Failure Mode During Accelerated Electromigration Tests

1994 ◽  
Vol 356 ◽  
Author(s):  
S. Pramanick ◽  
D. D. Brown ◽  
V. Pham ◽  
P. Besser ◽  
J. Sanchez ◽  
...  
Keyword(s):  
Stress State ◽  
Mechanical Stress ◽  
Failure Mode ◽  
Current Density ◽  
Failure Modes ◽  
High Current Density ◽  
Mode Selection ◽  
High Current ◽  
Stress States ◽  
Interconnect Lines

AbstractThe electromigration failure mode and failure rate during accelerated electromigration testing is expected to be strongly affected by the mechanical stress state of Al lines, since tensile stress and compressive stress states favor void growth and hillock formations (extrusions), respectively. During electromigration testing, the mechanical stress state or evolution of mechanical stress of an interconnect is a function of current density and temperature, the two principal variables in electromigration testing. In our experiments, we have observed two different electromigration failure modes by varying the current density and temperatures where (i) the passivated Al lines tested at high current density and high temperatures failed by extrusion or hillock type failure and (ii) the interconnect lines tested at low current density and moderate temperature failed by voiding. A mechanical stress model which incorporates both the thermally generated stress and electromigration induced mechanical stress is invoked to explain the electromigration failure mode selection observed in our experiments.

scholarly journals Growth of sillenite Bi12FeO20 single crystals: structural, thermal, optical, photocatalytic features and first principle calculations

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Durga Sankar Vavilapalli ◽  
Ambrose A. Melvin ◽  
F. Bellarmine ◽  
Ramanjaneyulu Mannam ◽  
Srihari Velaga ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
First Principle ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Principle Calculations ◽  
Photodegradation Efficiency

AbstractIdeal sillenite type Bi12FeO20 (BFO) micron sized single crystals have been successfully grown via inexpensive hydrothermal method. The refined single crystal X-ray diffraction data reveals cubic Bi12FeO20 structure with single crystal parameters. Occurrence of rare Fe4+ state is identified via X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The lattice parameter (a) and corresponding molar volume (Vm) of Bi12FeO20 have been measured in the temperature range of 30–700 °C by the X-ray diffraction method. The thermal expansion coefficient (α) 3.93 × 10–5 K−1 was calculated from the measured values of the parameters. Electronic structure and density of states are investigated by first principle calculations. Photoelectrochemical measurements on single crystals with bandgap of 2 eV reveal significant photo response. The photoactivity of as grown crystals were further investigated by degrading organic effluents such as Methylene blue (MB) and Congo red (CR) under natural sunlight. BFO showed photodegradation efficiency about 74.23% and 32.10% for degrading MB and CR respectively. Interesting morphology and microstructure of pointed spearhead like BFO crystals provide a new insight in designing and synthesizing multifunctional single crystals.

scholarly journals Study of Corrosion Resistance and Degradation Mechanisms in LiTiO2-Li2TiO3 Ceramic

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 753
Author(s):  
Dmitriy Shlimas ◽  
Artem L. Kozlovskiy ◽  
Maxim Zdorovets
Keyword(s):  
Degradation Mechanism ◽  
Diffraction Method ◽  
Large Mass ◽  
Time Frame ◽  
X Ray Diffraction ◽  
Acidic Media ◽  
X Ray ◽  
Mass Losses ◽  
The Stability ◽  
Thermal Sintering

The interest in lithium-containing ceramics is due to their huge potential as blanket materials for thermonuclear reactors for the accumulation of tritium. However, an important factor in their use is the preservation of the stability of their strength and structural properties when under the influence of external factors that determine the time frame of their operation. This paper presents the results of a study that investigated the influence of the LiTiO2 phase on the increasing resistance to degradation and corrosion of Li2TiO3 ceramic when exposed to aggressive acidic media. Using the X-ray diffraction method, it was found that an increase in the concentration of LiClO4·3H2O during synthesis leads to the formation of a cubic LiTiO2 phase in the structure as a result of thermal sintering of the samples. During corrosion tests, it was found that the presence of the LiTiO2 phase leads to a decrease in the degradation rate in acidic media by 20–70%, depending on the concentration of the phase. At the same time, and in contrast to the samples of Li2TiO3 ceramics, for which the mechanisms of degradation during a long stay in aggressive media are accompanied by large mass losses, for the samples containing the LiTiO2 phase, the main degradation mechanism is pitting corrosion with the formation of pitting inclusions.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

A Method for Evaluating Intensity of Water Cavitation Peening Processing

2011 ◽  
Vol 675-677 ◽  
pp. 747-750
Author(s):  
B. Han ◽  
Dong Ying Ju ◽  
Xiao Guang Yu
Keyword(s):  
Residual Stress ◽  
Process Capability ◽  
Diffraction Method ◽  
Spring Steel ◽  
Bubble Collapse ◽  
Plastic Layer ◽  
Process Conditions ◽  
X Ray Diffraction ◽  
Near Surface ◽  
The Impact

Water cavitation peening (WCP) with aeration, namely, a new ventilation nozzle with aeration is adopted to improve the process capability of WCP by increasing the impact pressure induced by the bubble collapse on the surface of components. In this study, in order to investigate the process capability of the WCP with aeration a standard N-type almen strips of spring steel SAE 1070 was treated byWCP with various process conditions, and the arc height value and the residual stress in the superficial layers were measured by means of the Almen-scale and X-ray diffraction method, respectively. The optimal fluxes of aeration and the optimal standoff distances were achieved. The maximum of arc height value reach around 150μm. The depth of plastic layer observed from the results of residual stresses is up to 150μm. The results verify the existence of macro-plastic strain in WCP processing. The distributions of residual stress in near-surface under different peening intensity can provide a reference for engineers to decide the optimal process conditions of WCP processing.

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