Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition

2019 ◽  
Vol 114 (15) ◽  
pp. 153901 ◽  
Author(s):  
Shenghao Li ◽  
Manuel Pomaska ◽  
Jan Hoß ◽  
Jan Lossen ◽  
Frank Pennartz ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Hot Wire

Efficient 18 Å/s Solar Cells with All Silicon Layers Deposited by Hot-Wire Chemical Vapor Deposition

2000 ◽  
Vol 609 ◽  
Author(s):  
Qi Wang ◽  
Eugene Iwaniczko ◽  
Yueqin Xu ◽  
Wei Gao ◽  
Brent P. Nelson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Hot Wire ◽  
Edge Layer ◽  
Hydrogenated Amorphous ◽  
Sun Light

ABSTRACTEfficient hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes. On an untextured stainless steel (SS) substrate, an initial efficiency of 7.12% is reached, with a stable efficiency of 5.4% after 1000 hours 1 sun light soaking. This initial efficiency is reached by incorporating into the p/i interface about 60 Å of intrinsic a-Si:H “edge” material grown under conditions near the transition to microcrystallinity. This edge layer increases the cell's fill factor from 0.60 to 0.68 and the best open-circuit voltage is about 0.88 V. Using textured Ag/ZnOcoated SS supplied by United Solar Corporation, preliminary results of an all-HWCVD solar cell give an initial efficiency of 8.7 %.

High Voltage Amorphous Silicon Solar Cells by Hot-Wire Chemical Vapor Deposition

2002 ◽  
Vol 715 ◽  
Author(s):  
Qi Wang ◽  
Eugene Iwaniczko
Keyword(s):  
Phase Transition ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Hot Wire ◽  
Steel Substrates ◽  
Hydrogenated Amorphous ◽  
P Cells

AbstractWe have achieved the best open-circuit voltage (Voc = 0.94 V) to-date in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells deposited entirely by hot-wire chemical vapor deposition. The fill factor (FF = 0.74) remained high and a current density of 8-9 mA/cm2 with about 1800 Å i-layer was obtained in our n-i-p cells on untextured stainless-steel substrates. The Voc improvement of about 60 mV in compared to our previous best Voc was obtained by incorporating materials grown with H-dilution close to the phase transition from amorphous to microcrystalline silicon in the i-layer and at the i-p interface. A low substrate temperature of 150°C for the i-layer was also essential, most likely to widen the bandgap of the i-layer. A brief atomic H-treatment after grown the i-layer increases the Voc further by improving the p-i interface. The last 60 Å of the i-layer before p-layer is extremely close to the transition to microcrystallinity, though it remains mainly amorphous. Our p-layers are also close to the phase transition.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Simple and fast fabrication of a-Si:H/c-Si hetero-junction solar cells by dual-chamber hot wire chemical vapor deposition

2014 ◽  
Vol 68 ◽  
pp. 397-402 ◽  
Author(s):  
Dae Young Jeong ◽  
Kyungmin Kim ◽  
Hee-eun Song ◽  
Jinsoo Song ◽  
Seung Jae Baik ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Dual Chamber

In-line deposition of silicon-based films by hot-wire chemical vapor deposition

2013 ◽  
Vol 215 ◽  
pp. 141-147 ◽  
Author(s):  
Lothar Schäfer ◽  
Tino Harig ◽  
Markus Höfer ◽  
Artur Laukart ◽  
Dietmar Borchert ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Based
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