A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors

2015 ◽  
Vol 62 (3) ◽  
pp. 813-820 ◽  
Author(s):  
Yuan Taur ◽  
Han-Ping Chen ◽  
Qian Xie ◽  
Jaesoo Ahn ◽  
Paul C. McIntyre ◽  
...  
Keyword(s):  
Interface States ◽  
Band Model ◽  
Mos Capacitors ◽  
Oxide Traps ◽  
Two Band Model

IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDE

1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier
Keyword(s):  
Ionization Energy ◽  
Impurity Band ◽  
Shallow Donor ◽  
Band Model ◽  
A Value ◽  
Transition Concentration ◽  
Temperature Electron ◽  
Two Band Model ◽  
Band Conduction ◽  
Made In

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.

ENERGY BAND OVERLAPPING IN HIGH-Tc SUPERCONDUCTORS

1996 ◽  
Vol 10 (30) ◽  
pp. 1483-1490 ◽  
Author(s):  
M. MORENO ◽  
R. M. MÉNDEZ-MORENO ◽  
M. A. ORTIZ ◽  
S. OROZCO
Keyword(s):  
Weak Coupling ◽  
Cuprate Superconductors ◽  
Weak Coupling Limit ◽  
Band Model ◽  
Coupling Constant ◽  
High Tc Superconductors ◽  
Energy Bands ◽  
Effective Coupling ◽  
High Tc ◽  
Two Band Model

Multi-band superconductors are analyzed and the relevance of overlapping energy bands to the high-T c of these materials is studied. Within the BCS framework, a two band model with generalized Fermi surface topologies is developed. Values of the overlapped occupancy parameters for typical cuprate superconductors are obtained as a function of the ratio R and the effective coupling constant, λ, in the weak-coupling limit. The overlap scale is of the order or lower than the cutoff (Debye) energy. The typical behavior of the isotope effect is obtained. As these superconductors have transition temperatures above the phonon barrier, the results of this approach are important to the generic understanding of the high-T c superconducting mechanism.

Thermoelectric Power of the Liquid Sn—Te Alloy

1982 ◽  
Vol 37 (10) ◽  
pp. 1127-1131 ◽  
Author(s):  
D. H. Kurlat ◽  
M. Rosen
Keyword(s):  
Thermoelectric Power ◽  
Hard Sphere ◽  
Stoichiometric Composition ◽  
Band Model ◽  
Liquid Alloys ◽  
Sphere Approximation ◽  
The Difference ◽  
Predicted Values ◽  
Experimental Values ◽  
Two Band Model

The Seebeck coefficient (S) of Sni1-x- Tex liquid alloys was measured as a function of concentration and temperature. For 0 ≦ x <0.45 the behaviour is metallic; S values are small and negative, rising linearly with temperature. The predicted values of Ziman's theory when using the hard sphere approximation disagree with the experimental ones. The change in sign occurs for 0.45. For x = 0.5 (stoichiometric composition) the thermoelectric power decreases linearly with temperature. This fact is explained assuming a two-band model. For x ≧ 0.6 the liquid alloy becomes more semiconducting and presents a maximum in the isotherms of S for x = 0.65. For the excess tellurium concentration range we have calculated the difference EF - EV and γ/kB, assuming a S(1/T) law. The experimental values are compared with those of Dancy and Glazov.

Long‐term charge storage in interface states of ZnS MOS capacitors

1975 ◽  
Vol 46 (7) ◽  
pp. 2992-2997 ◽  
Author(s):  
L. G. Walker ◽  
G. W. Pratt Jr.
Keyword(s):  
Interface States ◽  
Charge Storage ◽  
Mos Capacitors
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