scholarly journals Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks

2019 ◽  
Vol 125 (11) ◽  
pp. 115102 ◽  
Author(s):  
Joe Sakai ◽  
Maxime Bavencoffe ◽  
Beatrice Negulescu ◽  
Patrice Limelette ◽  
Jérôme Wolfman ◽  
...  
Keyword(s):  
Induced Resistance ◽  
Piezoelectric Ceramic ◽  
Resistance Change

Laser Failure Isolation Techniques Demonstrated On Test Structures

2008 ◽  
Author(s):  
Frank S. Arnold
Keyword(s):  
Integrated Circuits ◽  
Laser Beam ◽  
Case Studies ◽  
Induced Resistance ◽  
Simple Test ◽  
Resistance Change ◽  
Cross Sectional ◽  
Beam Focusing ◽  
Isolation Techniques ◽  
Heating Effects

Abstract To be better prepared to use laser based failure isolation techniques on field failures of complex integrated circuits, simple test structures without any failures can be used to study Optical Beam Induced Resistance Change (OBIRCH) results. In this article, four case studies are presented on the following test structures: metal strap, contact string, VIA string, and comb test structure. Several experiments were done to investigate why an OBIRCH image was seen in certain areas of a VIA string and not in others. One experiment showed the OBRICH variation was not related to the cooling and heating effects of the topology, or laser beam focusing. A 4 point probe resistance measurement and cross-sectional views correlated with the OBIRCH results and proved OBIRCH was able to detect a variation in VIA fabrication.

Investigating carrier transport paths in organic nonvolatile bistable memory by optical beam induced resistance change

2011 ◽  
Vol 12 (10) ◽  
pp. 1632-1637 ◽  
Author(s):  
Heng-Tien Lin ◽  
Chang-Yu Lin ◽  
Zingway Pei ◽  
Jun-Rong Chen ◽  
Yi-Jen Chan ◽  
...  
Keyword(s):  
Induced Resistance ◽  
Carrier Transport ◽  
Optical Beam ◽  
Resistance Change

scholarly journals Theoretical study on electric-pulse-induced resistance change in perovskite Pr1－xCaxMnO3 films

2007 ◽  
Vol 56 (3) ◽  
pp. 1637
Author(s):  
Li Qian ◽  
Wang Zhi-Guo ◽  
Liu Su ◽  
Xing Zhong-Wen ◽  
Liu Mei
Keyword(s):  
Induced Resistance ◽  
Theoretical Study ◽  
Electric Pulse ◽  
Resistance Change

scholarly journals Resistance Reduction of Conductive Patterns Printed on Textile by Curing Shrinkage of Passivation Layers

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 539 ◽  
Author(s):  
Tomoya Koshi ◽  
Ken-ichi Nomura ◽  
Manabu Yoshida
Keyword(s):  
Induced Resistance ◽  
Tensile Deformation ◽  
Curing Temperature ◽  
Electronic Textiles ◽  
Resistance Change ◽  
Resistance Increase ◽  
Resistance Reduction ◽  
Passivation Layers ◽  
Curing Shrinkage ◽  
Initial Resistance

Directly printing conductive ink on textiles is simple and compatible with the conventional electronics manufacturing process. However, the conductive patterns thus formed often show high initial resistance and significant resistance increase due to tensile deformation. Achieving conductive patterns with low initial resistance and reduced deformation-induced resistance increase is a significant challenge in the field of electronic textiles (e-textiles). In this study, the passivation layers printed on conductive patterns, which are necessary for practical use, were examined as a possible solution. Specifically, the reduction of the initial resistance and deformation-induced resistance increase, caused by the curing shrinkage of passivation layers, were theoretically and experimentally investigated. In the theoretical analysis, to clarify the mechanism of the reduction of deformation-induced resistance increase, crack propagation in conductive patterns was analyzed. In the experiments, conductive patterns with and without shrinking passivation layers (polydimethylsiloxane) cured at temperatures of 20–120 °C were prepared, and the initial resistances and resistance increases due to cyclic tensile and washing in each case were compared. As a result, the initial resistance was reduced further by the formation of shrinking passivation layers cured at higher temperatures, and reduced to 0.45 times when the curing temperature was 120 °C. The cyclic tensile and washing tests confirmed a 0.48 and a 0.011 times reduction of resistance change rate after the 100th elongation cycle (10% in elongation rate) and the 10th washing cycle, respectively, by comparing the samples with and without shrinking passivation layers cured at 120 °C.

Current Dependence of Reversible Electromigration Induced Resistance Changes in Short Al Lines and Interpretation of Irreversible Effects

1996 ◽  
Vol 428 ◽  
Author(s):  
A. H. Verbruggen ◽  
M. J. C. Van Den Homberg ◽  
A. J. Kalkman ◽  
J. R. Kraayeveld ◽  
A. W.-J. Willemsen ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Induced Resistance ◽  
Current Density ◽  
Linear Dependence ◽  
Resistance Change ◽  
Current Dependence ◽  
Force Microscopy ◽  
Atomic Force ◽  
Irreversible Effects ◽  
Current Densities

AbstractChanges in the electrical resistance induced by electromigration in short (< 20 μm) Al lines show a rather well-defined behavior. For current densities j below a critical value jc the resistance change saturates with time and the resistance fully recovers when the current is switched off. Above the critical current density the induced resistance changes do not saturate and vary approximately linearly with time. In this case the resistance changes recover only partially after removal of the current. We report (i) measurements of the current dependence of the magnitude of the reversible resistance changes and (ii) the results of atomic force microscopy (AFM) inspection of the lines after stressing with current densities above jc. The resistance measurements were made with a high-resolution AC bridge technique. The samples were pure, unpassivated Al lines with a film thickness of 100 nm and a line width of 2 gm. The results show a linear dependence between the magnitude of the reversible changes and the current density. The linear dependence is predicted by two models. The first is based on a description of the vacancy flux and the second on a description of the build-up of mechanical stress during an electromigration experiment. To study the origin of the irreversible effects, samples were stressed at current densities above jc, and the induced irreversible changes in the resistance were recorded. Both negative and positive changes of the resistance were observed. After six hours the experiment was stopped and the lines were inspected by atomic force microscopy. It was always possible to observe a void, a hillock or a hillock/void pair that was created during the passage of the DC current. Moreover, lines with decreasing resistance during stress always showed a hillock and lines with an increased resistance always showed a void.

scholarly journals Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

2020 ◽  
Vol 10 (23) ◽  
pp. 8576
Author(s):  
Han Yang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Yanan Liang ◽  
Yingqi Ma ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Induced Resistance ◽  
Seebeck Effect ◽  
Comprehensive Model ◽  
Induced Voltage ◽  
Efficient Technology ◽  
Resistance Change ◽  
Scanning Velocity ◽  
Laser Stimulation ◽  
Defect Localization

Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change and the Seebeck effect. In this paper, a comprehensive model of TLS technology is proposed. Firstly, the model presents an analytical expression of the temperature variation in Integrated Circuits (IC) after laser irradiation, which quantificationally shows the positive correlation with laser power and the negative correlation with scanning velocity. Secondly, the model describes the opposite influence of laser-induced resistance change and the Seebeck effect in the device. Finally, the relationship between the current variation measured in the experiment and other parameters, especially the voltage bias, is well explained by the model. The comprehensive model provides theoretical guidance for the efficient and accurate defect localization of TLS technology.

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