scholarly journals Resistance Reduction of Conductive Patterns Printed on Textile by Curing Shrinkage of Passivation Layers

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 539 ◽  
Author(s):  
Tomoya Koshi ◽  
Ken-ichi Nomura ◽  
Manabu Yoshida

Directly printing conductive ink on textiles is simple and compatible with the conventional electronics manufacturing process. However, the conductive patterns thus formed often show high initial resistance and significant resistance increase due to tensile deformation. Achieving conductive patterns with low initial resistance and reduced deformation-induced resistance increase is a significant challenge in the field of electronic textiles (e-textiles). In this study, the passivation layers printed on conductive patterns, which are necessary for practical use, were examined as a possible solution. Specifically, the reduction of the initial resistance and deformation-induced resistance increase, caused by the curing shrinkage of passivation layers, were theoretically and experimentally investigated. In the theoretical analysis, to clarify the mechanism of the reduction of deformation-induced resistance increase, crack propagation in conductive patterns was analyzed. In the experiments, conductive patterns with and without shrinking passivation layers (polydimethylsiloxane) cured at temperatures of 20–120 °C were prepared, and the initial resistances and resistance increases due to cyclic tensile and washing in each case were compared. As a result, the initial resistance was reduced further by the formation of shrinking passivation layers cured at higher temperatures, and reduced to 0.45 times when the curing temperature was 120 °C. The cyclic tensile and washing tests confirmed a 0.48 and a 0.011 times reduction of resistance change rate after the 100th elongation cycle (10% in elongation rate) and the 10th washing cycle, respectively, by comparing the samples with and without shrinking passivation layers cured at 120 °C.

2006 ◽  
Vol 326-328 ◽  
pp. 1499-1502 ◽  
Author(s):  
Shao Peng Wu ◽  
Xiao Ming Liu ◽  
Lian Tong Mo ◽  
Qun Shan Ye

Fatigue damage self-monitoring mechanism of graphite modified asphalt-based composite materials is demonstrated in this paper, as damage (occurring in the 70% of fatigue life) caused the volume electrical resistance to increase irreversibly. Results showed that when the initial resistance is relatively high (10k), the resistance variation sensitivity of microcrack is lower, but it has relatively high sensitivity to microcrack when the initial resistance 1k. The longer the loading time, the greater the damage, and the greater the resistance increases monotonically occurred. The resistance increase is attributed to the proximity effect, microcrack and the disconnection of conductive paths due to shear strength of aggregates. The self-monitoring mechanism of damage is the resistance change aroused by the variation of interior structure.


Author(s):  
Frank S. Arnold

Abstract To be better prepared to use laser based failure isolation techniques on field failures of complex integrated circuits, simple test structures without any failures can be used to study Optical Beam Induced Resistance Change (OBIRCH) results. In this article, four case studies are presented on the following test structures: metal strap, contact string, VIA string, and comb test structure. Several experiments were done to investigate why an OBIRCH image was seen in certain areas of a VIA string and not in others. One experiment showed the OBRICH variation was not related to the cooling and heating effects of the topology, or laser beam focusing. A 4 point probe resistance measurement and cross-sectional views correlated with the OBIRCH results and proved OBIRCH was able to detect a variation in VIA fabrication.


2011 ◽  
Vol 12 (10) ◽  
pp. 1632-1637 ◽  
Author(s):  
Heng-Tien Lin ◽  
Chang-Yu Lin ◽  
Zingway Pei ◽  
Jun-Rong Chen ◽  
Yi-Jen Chan ◽  
...  

2007 ◽  
Vol 56 (3) ◽  
pp. 1637
Author(s):  
Li Qian ◽  
Wang Zhi-Guo ◽  
Liu Su ◽  
Xing Zhong-Wen ◽  
Liu Mei

2019 ◽  
Vol 125 (11) ◽  
pp. 115102 ◽  
Author(s):  
Joe Sakai ◽  
Maxime Bavencoffe ◽  
Beatrice Negulescu ◽  
Patrice Limelette ◽  
Jérôme Wolfman ◽  
...  

1996 ◽  
Vol 428 ◽  
Author(s):  
A. H. Verbruggen ◽  
M. J. C. Van Den Homberg ◽  
A. J. Kalkman ◽  
J. R. Kraayeveld ◽  
A. W.-J. Willemsen ◽  
...  

AbstractChanges in the electrical resistance induced by electromigration in short (< 20 μm) Al lines show a rather well-defined behavior. For current densities j below a critical value jc the resistance change saturates with time and the resistance fully recovers when the current is switched off. Above the critical current density the induced resistance changes do not saturate and vary approximately linearly with time. In this case the resistance changes recover only partially after removal of the current. We report (i) measurements of the current dependence of the magnitude of the reversible resistance changes and (ii) the results of atomic force microscopy (AFM) inspection of the lines after stressing with current densities above jc. The resistance measurements were made with a high-resolution AC bridge technique. The samples were pure, unpassivated Al lines with a film thickness of 100 nm and a line width of 2 gm. The results show a linear dependence between the magnitude of the reversible changes and the current density. The linear dependence is predicted by two models. The first is based on a description of the vacancy flux and the second on a description of the build-up of mechanical stress during an electromigration experiment. To study the origin of the irreversible effects, samples were stressed at current densities above jc, and the induced irreversible changes in the resistance were recorded. Both negative and positive changes of the resistance were observed. After six hours the experiment was stopped and the lines were inspected by atomic force microscopy. It was always possible to observe a void, a hillock or a hillock/void pair that was created during the passage of the DC current. Moreover, lines with decreasing resistance during stress always showed a hillock and lines with an increased resistance always showed a void.


1958 ◽  
Vol 192 (3) ◽  
pp. 457-463 ◽  
Author(s):  
A. Van Harreveld

One of the concomitants of spreading depression is a considerable increase in the cortical electrical resistance. After cortical asphyxiation a similar resistance increase has been observed. It was postulated that these resistance increases are due to a transport of ions from the extracellular compartment into the cortical cells and fibers. To maintain osmotic equilibrium this has to be accompanied by water transport causing a swelling of cortical elements. A swelling of nerve cells and apical dendrites has been found to accompany the asphyxial resistance increase. In the present paper the diameters of apical dendrites during spreading depression were compared with the dendritic diameters in the contralateral hemisphere where no spreading depression was in progress. A mean increase in diameter of 17% was observed during spreading depression. No swelling of the apical dendrites was observed in the retrosplenial area which is not normally invaded by spreading depression. These findings support the notion that the resistance change during spreading depression is due to the same mechanism as that after cortical asphyxiation, namely to an ion transport accompanied by a water movement from extra- into intracellular spaces.


Sign in / Sign up

Export Citation Format

Share Document