Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

2019 ◽  
Vol 125 (18) ◽  
pp. 185705 ◽  
Author(s):  
Felix Mahler ◽  
Jens W. Tomm ◽  
Klaus Reimann ◽  
Michael Woerner ◽  
Veit Hoffmann ◽  
...  
Keyword(s):  
Structural Stability ◽  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Time Resolved Photoluminescence

Time resolved photoluminescence studies of perpendicular transport in CdTe/Cd1−xMnxTe short‐period superlattices

1993 ◽  
Vol 74 (8) ◽  
pp. 5272-5274 ◽  
Author(s):  
R. Hellmann ◽  
A. Pohlmann ◽  
E. O. Göbel ◽  
D. R. Yakovlev ◽  
A. Waag ◽  
...  
Keyword(s):  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Short Period ◽  
Time Resolved Photoluminescence

Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence

1998 ◽  
Author(s):  
Vladimir G. Litovchenko ◽  
Dmytro V. Korbutyak ◽  
Sergiy G. Krylyuk ◽  
Holger T. Grahn ◽  
R. Klann ◽  
...  
Keyword(s):  
Electron Hole ◽  
Time Resolved ◽  
Short Period ◽  
Time Resolved Photoluminescence

CW and Time-Resolved Photoluminescence Analysis of Silicon Implanted Glass Low-Temperature Annealed at Different Times

2003 ◽  
Vol 770 ◽  
Author(s):  
Gong-Ru Lin ◽  
Chun-Jung Lin
Keyword(s):  
Low Temperature ◽  
Oxygen Vacancy ◽  
Borosilicate Glass ◽  
Radiative Recombination ◽  
Continuous Wave ◽  
Annealing Process ◽  
Time Resolved ◽  
Order Of Magnitude ◽  
Time Resolved Photoluminescence

AbstractThe effects of annealing time on continuous-wave (CW) and nanosecond time-resolved (TR) photoluminescence (PL) spectra of silicon-ion-implanted Borosilicate glass (BSO:Si+) annealing at 500°C are characterized. A broadband CWPL of the as-implanted BSO:Si+ at 450-530 nm is observed, and the luminescent peak is found to slightly red-shift after annealing for 90 min. The increasing CWPL intensity reveals that the natural oxygen vacancy (NOV, ΞSi Si-SiΞ) related irradiative defect is highly activated during 30-min annealing, however, which abruptly decreases with the annealing lengthens to 60-min or longer. The TRPL analysis indicates a non-radiative recombination process with a sub-picosecond lifetime for the blank BSO and the as-implanted BSO:Si+ samples, which gradually disappears as the BSO:Si+ is long-term annealed. The irradiative luminescent lifetime of the 60-min annealed BSO:Si+ is lengthened from 1.7 ns to 2.8 ns, which reveals that the density of the NOV defect is decreasing by at least one order of magnitude. A longer irradiative decay with nearly identical lifetime is also found in all annealed BSO:Si+. The ratios of TRPL peak intensities for different samples correlate well with those observed in CWPL measurement, however, the weighting factors of TRPL intensities for the latter two decaying components are vicissitudinous each other in different samples BSO:Si+. This interprets a significant evolution among different decaying mechanisms during the annealing process.

Time-resolved high-resolution electron microscopy of structural stability in mgo clusters

1996 ◽  
Vol 54 ◽  
pp. 672-673
Author(s):  
T. Kizuka ◽  
N. Tanaka
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Magnesium Oxide ◽  
Structural Stability ◽  
High Resolution Electron Microscopy ◽  
Video Tape ◽  
Solid State Physics ◽  
Time Resolved ◽  
Resolution Electron ◽  
Structural And Functional Properties

Structure and stability of atomic clusters have been studied by time-resolved high-resolution electron microscopy (TRHREM). Typical examples are observations of structural fluctuation in gold (Au) clusters supported on silicon oxide films, graphtized carbon films and magnesium oxide (MgO) films. All the observations have been performed on the clusters consisted of single metal element. Structural stability of ceramics clusters, such as metal-oxide, metal-nitride and metal-carbide clusters, has not been observed by TRHREM although the clusters show anomalous structural and functional properties concerning to solid state physics and materials science.In the present study, the behavior of ceramic, magnesium oxide (MgO) clusters is for the first time observed by TRHREM at 1/60 s time resolution and at atomic resolution down to 0.2 nm.MgO and gold were subsequently deposited on sodium chloride (001) substrates. The specimens, single crystalline MgO films on which Au particles were dispersed were separated in distilled water and observed by using a 200-kV high-resolution electron microscope (JEOL, JEM2010) equipped with a high sensitive TV camera and a video tape recorder system.

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

Blue-green lasers based on short-period superlattices in II-VI compounds

1999 ◽  
Vol 169 (4) ◽  
pp. 468 ◽  
Author(s):  
S.V. Ivanov ◽  
Petr S. Kop'ev ◽  
A.A. Toropov
Keyword(s):  
Short Period ◽  
Short Period Superlattices
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