CW and Time-Resolved Photoluminescence Analysis of Silicon Implanted Glass Low-Temperature Annealed at Different Times

2003 ◽  
Vol 770 ◽  
Author(s):  
Gong-Ru Lin ◽  
Chun-Jung Lin
Keyword(s):  
Low Temperature ◽  
Oxygen Vacancy ◽  
Borosilicate Glass ◽  
Radiative Recombination ◽  
Continuous Wave ◽  
Annealing Process ◽  
Time Resolved ◽  
Order Of Magnitude ◽  
Time Resolved Photoluminescence

AbstractThe effects of annealing time on continuous-wave (CW) and nanosecond time-resolved (TR) photoluminescence (PL) spectra of silicon-ion-implanted Borosilicate glass (BSO:Si+) annealing at 500°C are characterized. A broadband CWPL of the as-implanted BSO:Si+ at 450-530 nm is observed, and the luminescent peak is found to slightly red-shift after annealing for 90 min. The increasing CWPL intensity reveals that the natural oxygen vacancy (NOV, ΞSi Si-SiΞ) related irradiative defect is highly activated during 30-min annealing, however, which abruptly decreases with the annealing lengthens to 60-min or longer. The TRPL analysis indicates a non-radiative recombination process with a sub-picosecond lifetime for the blank BSO and the as-implanted BSO:Si+ samples, which gradually disappears as the BSO:Si+ is long-term annealed. The irradiative luminescent lifetime of the 60-min annealed BSO:Si+ is lengthened from 1.7 ns to 2.8 ns, which reveals that the density of the NOV defect is decreasing by at least one order of magnitude. A longer irradiative decay with nearly identical lifetime is also found in all annealed BSO:Si+. The ratios of TRPL peak intensities for different samples correlate well with those observed in CWPL measurement, however, the weighting factors of TRPL intensities for the latter two decaying components are vicissitudinous each other in different samples BSO:Si+. This interprets a significant evolution among different decaying mechanisms during the annealing process.

Robust single-mode lasers based on hexagonal CdS microflakes

2020 ◽  
Vol 8 (32) ◽  
pp. 11201-11208
Author(s):  
Yang Mi ◽  
Yaoyao Wu ◽  
Jinchun Shi ◽  
Sheng-Nian Luo
Keyword(s):  
Radiative Recombination ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
High Quality ◽  
Time Resolved ◽  
Whispering Gallery ◽  
Electron Hole Plasma ◽  
Time Resolved Photoluminescence

We have achieved single-mode whispering-gallery-mode lasing in CdS microflakes with sharp linewidth (∼0.12 nm) and high quality factor (∼4200). Such lasers are superior to previous CdS lasers in these lasing parameters. Through time-resolved photoluminescence measurements, electron–hole plasma recombination is established to be the lasing mechanism. The radiative recombination rate of CdS microflakes is enhanced by a factor of ∼4.7 due to the Purcell effect.

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

2019 ◽  
Vol 125 (18) ◽  
pp. 185705 ◽  
Author(s):  
Felix Mahler ◽  
Jens W. Tomm ◽  
Klaus Reimann ◽  
Michael Woerner ◽  
Veit Hoffmann ◽  
...  
Keyword(s):  
Structural Stability ◽  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence in CdIn2S4

1987 ◽  
Vol 65 (3) ◽  
pp. 204-207 ◽  
Author(s):  
S. Charbonneau ◽  
E. Fortin ◽  
J. Beauvais
Keyword(s):  
Single Crystals ◽  
Free Electron ◽  
Continuous Wave ◽  
Time Window ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Spectral Bands ◽  
Window Technique ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

Photoluminescence spectra of CdIn2S4 single crystals at 1.8 K under both continuous-wave (CW) and pulsed excitation were obtained. In the latter case, a variable time-window technique was used to observe the time evolution of the spectra between 0 and 100 μs. In contrast to previous studies, four spectral bands were observed under both CW and pulsed, intrinsic or extrinsic excitation. In particular, two bands previously unobserved under extrinsic excitation were detected at 1.35 and 1.68 eV, and have been attributed to donor–acceptor pairs and free-electron to acceptor transitions respectively.

Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system

2009 ◽  
Vol 24 (7) ◽  
pp. 2252-2258 ◽  
Author(s):  
Li-Wen Lai ◽  
Jheng-Tai Yan ◽  
Chia-Hsun Chen ◽  
Li-Ren Lou ◽  
Ching-Ting Lee
Keyword(s):  
Low Temperature ◽  
Oxygen Vacancies ◽  
Carrier Lifetime ◽  
Nitrogen Atmosphere ◽  
Zno Films ◽  
Deposition Condition ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Crystallographic Structures ◽  
Time Resolved Photoluminescence

AlN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N2/(N2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AlN codoped ZnO films with various crystallographic structures and bonding configurations were measured. With an adequate nitrogen atmosphere deposition condition and postannealing temperature at 450 °C, the p-type conductive behaviors of AlN codoped ZnO films were achieved due to the formation of Zn–N bonds. According to the low-temperature photoluminescence spectra, the binding energy (EA) of 0.16 eV for N acceptors can be calculated. Using time-resolved photoluminescence measurement, the carrier lifetime in AlN codoped ZnO films increases due to the reduction of oxygen vacancies caused by the occupation of adequate nitrogen atoms.

Low temperature time resolved photoluminescence in ordered and disordered Cu2ZnSnS4 single crystals

2017 ◽  
Vol 508 ◽  
pp. 47-50 ◽  
Author(s):  
Taavi Raadik ◽  
Jüri Krustok ◽  
M. Kauk-Kuusik ◽  
K. Timmo ◽  
M. Grossberg ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Temperature Time
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