Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence

1998 ◽  
Author(s):  
Vladimir G. Litovchenko ◽  
Dmytro V. Korbutyak ◽  
Sergiy G. Krylyuk ◽  
Holger T. Grahn ◽  
R. Klann ◽  
...  
Keyword(s):  
Electron Hole ◽  
Time Resolved ◽  
Short Period ◽  
Time Resolved Photoluminescence

Robust single-mode lasers based on hexagonal CdS microflakes

2020 ◽  
Vol 8 (32) ◽  
pp. 11201-11208
Author(s):  
Yang Mi ◽  
Yaoyao Wu ◽  
Jinchun Shi ◽  
Sheng-Nian Luo
Keyword(s):  
Radiative Recombination ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
High Quality ◽  
Time Resolved ◽  
Whispering Gallery ◽  
Electron Hole Plasma ◽  
Time Resolved Photoluminescence

We have achieved single-mode whispering-gallery-mode lasing in CdS microflakes with sharp linewidth (∼0.12 nm) and high quality factor (∼4200). Such lasers are superior to previous CdS lasers in these lasing parameters. Through time-resolved photoluminescence measurements, electron–hole plasma recombination is established to be the lasing mechanism. The radiative recombination rate of CdS microflakes is enhanced by a factor of ∼4.7 due to the Purcell effect.

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

2019 ◽  
Vol 125 (18) ◽  
pp. 185705 ◽  
Author(s):  
Felix Mahler ◽  
Jens W. Tomm ◽  
Klaus Reimann ◽  
Michael Woerner ◽  
Veit Hoffmann ◽  
...  
Keyword(s):  
Structural Stability ◽  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Time Resolved Photoluminescence

EXCITONIC SIDE BANDS OF INNER-SHELL EXCITATIONS IN RARE GAS SOLIDS

2002 ◽  
Vol 09 (02) ◽  
pp. 1333-1338 ◽  
Author(s):  
S. VIELHAUER ◽  
M. KIRM ◽  
V. KISAND ◽  
E. NEGODIN ◽  
E. SOMBROWSKI ◽  
...  
Keyword(s):  
Free Exciton ◽  
Rare Gas ◽  
Excitation Threshold ◽  
Energy Position ◽  
Excitation Spectra ◽  
Electron Hole ◽  
Time Resolved ◽  
Ionization Limit ◽  
Time Resolved Photoluminescence ◽  
Hole Recombination

Valence-exciton luminescence under inner-shell excitation of the rare gas solids Xe, Kr, and Ar has been measured using time-resolved photoluminescence. Two different processes for exciton creation can be distinguished: creation of "prompt" excitons immediately after excitation (within the experimental time resolution), and creation of "delayed" excitons through electron–hole recombination. The decay structure of the exciton emission in the range of inner-shell excitation is characterized by the coexistence of the two processes. Time-resolved excitation spectra near the 2p edge in Ar, the 3d edge in Kr, and the 4d edge in Xe are discussed. The process of prompt exciton creation is strongly enhanced above an excitation threshold at the energy position of the ionization limit of the core state plus the energy of the valence free exciton.

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Short Period ◽  
Time Resolved Photoluminescence

Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

Optical Properties of Ingan/GaN Multi Quantum Well Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
J. P. Bergman ◽  
N. Saksulv ◽  
J. Dalfors ◽  
P. O. Holtz ◽  
B. Monemar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Rates ◽  
Energy Position ◽  
Electron Hole ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Lower Energy Band ◽  
Time Resolved Photoluminescence ◽  
Multi Quantum Well

AbstractA set of GaN/InGaN multiple quantum wells (QWs) with well thickness 30 Å and barrier thickness 60 Å were grown by MOCVD on sapphire substrates. The n-type Si doping of the InGaN QWs was varied, in order to produce a different electron concentration in the QWs for the different samples. Optical spectra were obtained by time resolved photoluminescence spectroscopy. The data show weak excitonic spectra from the QWs as well as a broad deeper emission with a much stronger intensity. The spectral shape becomes narrower and the energy position shifts to higher energies with increasing doping. The two different emissions are not easily separated in CW or time integrated spectra, but are clearly observed in a time resolved spectral measurement due to their different recombination rates. The deeper emission has a long and non-exponential decay, with an average decay time in the order of several hundred nanoseconds. The higher energy exciton emission has a much faster decay of about 1 ns. The lower energy band is tentatively explained as due to separately localized electron-hole (e-h) pairs in the QW.

The Formation of Radiative Defects at GaAs/GaInP Interface

1995 ◽  
Vol 417 ◽  
Author(s):  
Kazuo Uchida ◽  
Takayuki Arai ◽  
Koh Matsumoto
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Time Resolved ◽  
Organic Vapor ◽  
Spatially Distributed ◽  
Electron Hole Pair ◽  
Metal Organic ◽  
Related Defect ◽  
Time Resolved Photoluminescence

AbstractWe report the optical characteristics of 100 A˚ thick GaAs/Ga0.521n0.48P single quantum wells grown by Metal Organic Vapor Phase Epitaxy. We have confirmed from the 77 K photoluminescence (PL) that an optimum growth sequence is necessary to achieve the emission from the well (1.52 eV), otherwise only the deep emission band (1.46 eV) is observed. From the time-resolved photoluminescence and temperature dependent PL measurements, we assign that this 1.46 eV deep emission is a recombination of electron-hole pair in a vacancy-related defect which is spatially distributed at the imperfect GaAs/Ga 0.521n0.48P interface.

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