Time resolved photoluminescence studies of perpendicular transport in CdTe/Cd1−xMnxTe short‐period superlattices

1993 ◽  
Vol 74 (8) ◽  
pp. 5272-5274 ◽  
Author(s):  
R. Hellmann ◽  
A. Pohlmann ◽  
E. O. Göbel ◽  
D. R. Yakovlev ◽  
A. Waag ◽  
...  
Keyword(s):  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

2019 ◽  
Vol 125 (18) ◽  
pp. 185705 ◽  
Author(s):  
Felix Mahler ◽  
Jens W. Tomm ◽  
Klaus Reimann ◽  
Michael Woerner ◽  
Veit Hoffmann ◽  
...  
Keyword(s):  
Structural Stability ◽  
Time Resolved ◽  
Short Period ◽  
Short Period Superlattices ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of stimulated emission and exciton dynamics in ZnSe/ZnS0.18Se0.82 superlattices

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1133-1136
Author(s):  
C.J. Stevens ◽  
R.A. Taylor ◽  
J.F. Ryan ◽  
M. Dabbicco ◽  
M. Ferrara ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Time Resolved ◽  
Exciton Dynamics ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

UNDERSTANDING ULTRAVIOLET EMITTER PERFORMANCE USING INTENSITY DEPENDENT TIME-RESOLVED PHOTOLUMINESCENCE

2007 ◽  
Vol 17 (01) ◽  
pp. 179-188 ◽  
Author(s):  
MICHAEL WRABACK ◽  
GREGORY A. GARRETT ◽  
ANAND V. SAMPATH ◽  
PAUL H. SHEN
Keyword(s):  
Radiative Lifetime ◽  
Active Regions ◽  
Pump Intensity ◽  
Performance Comparison ◽  
Nonradiative Recombination ◽  
Extended Defects ◽  
Light Emitters ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of nitride semiconductors and ultraviolet light emitters comprised of these materials are performed as a function of pump intensity as a means of understanding and evaluating device performance. Comparison of time-resolved photoluminescence (TRPL) on UV LED wafers prior to fabrication with subsequent device testing indicate that the best performance is attained from active regions that exhibit both reduced nonradiative recombination due to saturation of traps associated with point and extended defects and concomitant lowering of radiative lifetime with increasing carrier density. Similar behavior is observed in optically pumped UV lasers. Temperature and intensity dependent TRPL measurements on a new material, AlGaN containing nanoscale compositional inhomogeneities (NCI), show that it inherently combines inhibition of nonradiative recombination with reduction of radiative lifetime, providing a potentially higher efficiency UV emitter active region.

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Short Period ◽  
Time Resolved Photoluminescence
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