scholarly journals Effect of heat treatment on thermoelectric properties of tungsten-rhenium thin-film thermocouples by RF magnetron sputtering

AIP Advances ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 125113 ◽  
Author(s):  
Zhongkai Zhang ◽  
Bian Tian ◽  
Zhe Du ◽  
Qijing Lin ◽  
Peng Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Magnetron Sputtering ◽  
Thermoelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Thin Film Thermocouples

The effects of PBB on the dielectric properties of BST film

2005 ◽  
Vol 902 ◽  
Author(s):  
Jin Cheol Kim ◽  
Jun Rok Oh
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Metal Oxide ◽  
Current Density ◽  
Energy Dispersive Spectrometer ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering

AbstractThe mixture of PbO-Bi2O3-B2O3 (PBB) were formed on the Ba0.5Sr0.5TiO3 (BST) film and the effects of PBB phase on the dielectric properties of the BST film were investigated. The amorphous PBB layer was deposited on the BST film using rf magnetron sputtering and diffused into the film by heat treatment. The PBB phase in BST film was identified by energy dispersive spectrometer (EDS). Dielectric properties of BST film were significantly improved after the diffusion of PBB. The leakage current density of BST film decreased from 3.24×10-5 A/cm2 to 9.45×10-8 A/cm2 at 1.5 V and the dielectric constant increased from 238 to 533. These results show that the diffusion of insulating metal oxide into the ferroelectric thin film can improve the dielectric properties of the film.

scholarly journals Effect of Annealing on the Thermoelectricity Properties of the WRe26-In2O3 Thin Film Thermocouples

Micromachines ◽  
2020 ◽  
Vol 11 (7) ◽  
pp. 664
Author(s):  
Bian Tian ◽  
Yan Liu ◽  
Zhongkai Zhang ◽  
Zhaojun Liu ◽  
Libo Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Practical Applications ◽  
Thermoelectric Voltage ◽  
Voltage Output ◽  
Thin Film Thermocouples ◽  
Future Work ◽  
Thermoelectric Stability

WRe26-In2O3 (WRe26 (tungsten-26% rhenium) and In2O3 thermoelectric materials) thin film thermocouples (TFTCs) have been fabricated based on magnetron sputtering technology, which can be used in temperature measurement. Many annealing processes were studied to promote the sensitivity of WRe26-In2O3 TFTCs. The optimal annealing process of the thermocouple under this kind of RF magnetron sputtering method was proposed after analyzing the properties of In2O3 films and the thermoelectric voltage of TFTCs at different annealing processes. The calibration results showed that the WRe26-In2O3 TFTCs achieved a thermoelectric voltage of 123.6 mV at a temperature difference of 612.9 K, with a sensitivity of up to 201.6 µV/K. Also, TFTC kept a stable thermoelectric voltage output at 973 K for 20 min and at 773 K for two hours. In general, the WRe26-In2O3 TFTCs developed in this work have great potential for practical applications. In future work, we will focus on the thermoelectric stability of TFTCs at higher temperatures.

scholarly journals Thermoelectric Characteristics of Silicon Carbide and Tungsten-Rhenium-Based Thin-Film Thermocouples Sensor with Protective Coating Layer by RF Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1981 ◽  
Author(s):  
Zhongkai Zhang ◽  
Bian Tian ◽  
Yan Liu ◽  
Zhe Du ◽  
Qijing Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Magnetron Sputtering ◽  
Temperature Difference ◽  
Protective Coating ◽  
Coating Layer ◽  
Response Speed ◽  
Rf Magnetron Sputtering ◽  
Junction Temperature ◽  
Thin Film Thermocouples

A thin-film thermocouples (TFTCs) sensor based on silicon carbide substrate, 95 wt% tungsten–5 wt% rhenium (W-5Re) and 74 wt% tungsten–26 wt% rhenium (W-26Re) thermosensitive part with aluminum oxide protective coating layer was designed and fabricated by radio frequency (RF) magnetron sputtering. It exhibited a high thermoelectric voltage of 35.51 mV when the temperature difference was 1240 °C (the hot junction temperature was 1420 °C), with an average Seebeck coefficient of 28.63 µV/°C, which was 27% larger than the standard C-type thermocouple wires at the same temperature difference. The repeatability error was ±4.1%, the drift rate was 9.6 °C/h for 10 h and the laser response time was 0.36 ms. Compared to the traditional thermocouple, it could provide long-term temperature testing within 1420 °C for the requirement of high-temperature measurement and high response speed.

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Al2o3 Doping
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