Thermoelectric power factor of pure and doped ZnSb via DFT based defect calculations

Ways to improve the thermoelectric properties of p and n-type zinc antimonide.

Energy Harvesting from a Thermoelectric Zinc Antimonide Thin Film under Steady and Unsteady Operating Conditions

In practice, there are some considerations to study stability, reliability, and output power optimization of a thermoelectric thin film operating dynamically. In this study stability and performance of a zinc antimonide thin film thermoelectric (TE) specimen is evaluated under transient with thermal and electrical load conditions. Thermoelectric behavior of the specimen and captured energy in each part of a thermal cycle are investigated. Glass is used as the substrate of the thin film, where the heat flow is parallel to the length of the thermoelectric element. In this work, the thermoelectric specimen is fixed between a heat sink exposed to the ambient temperature and a heater block. The specimen is tested under various electrical load cycles during a wide range of thermal cycles. The thermal cycles are provided for five different aimed temperatures at the hot junction, from 160 to 350 °C. The results show that the specimen generates approximately 30% of its total electrical energy during the cooling stage and 70% during the heating stage. The thin film generates maximum power of 8.78, 15.73, 27.81, 42.13, and 60.74 kW per unit volume of the thermoelectric material (kW/m3), excluding the substrate, corresponding to hot side temperature of 160, 200, 250, 300, and 350 °C, respectively. Furthermore, the results indicate that the thin film has high reliability after about one thousand thermal and electrical cycles, whereas there is no performance degradation.