The direct bandgap of gray α-tin investigated by infrared ellipsometry

2018 ◽  
Vol 113 (23) ◽  
pp. 232104 ◽  
Author(s):  
Rigo A. Carrasco ◽  
Cesy M. Zamarripa ◽  
Stefan Zollner ◽  
José Menéndez ◽  
Stephanie A. Chastang ◽  
...  
Keyword(s):  
Direct Bandgap ◽  
Infrared Ellipsometry

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

Doping Induced Indirect-to-Direct Bandgap Transition of Two-Dimensional Ga2O3

2021 ◽  
pp. 149458
Author(s):  
Xiangtai Liu Investigating ◽  
Kai Cheng ◽  
Ruiqi Li ◽  
Yifan Jia ◽  
Qin Lu ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Direct Bandgap

Infrared Ellipsometry On Silicon Wafers

1984 ◽  
Author(s):  
Thomas A. Leonard ◽  
John S. Loomis
Keyword(s):  
Silicon Wafers ◽  
Infrared Ellipsometry

Bonding structure of carbon nitride films by infrared ellipsometry

2001 ◽  
Vol 64 (12) ◽  
Author(s):  
A. Laskarakis ◽  
S. Logothetidis ◽  
M. Gioti
Keyword(s):  
Carbon Nitride ◽  
Bonding Structure ◽  
Infrared Ellipsometry

Optical Properties by Far Infrared Ellipsometry

1968 ◽  
Vol 115 (1) ◽  
pp. 106 ◽  
Author(s):  
Charlie E. Jones ◽  
A. Ray Hilton
Keyword(s):  
Optical Properties ◽  
Far Infrared ◽  
Infrared Ellipsometry

Carrier redistribution in organic/inorganic (poly(3,4-ethylenedioxy thiophene/poly(styrenesulfonate)polymer)-Si) heterojunction determined from infrared ellipsometry

2004 ◽  
Vol 84 (8) ◽  
pp. 1311-1313 ◽  
Author(s):  
M. Schubert ◽  
C. Bundesmann ◽  
H. v. Wenckstern ◽  
G. Jakopic ◽  
A. Haase ◽  
...  
Keyword(s):  
Infrared Ellipsometry ◽  
Carrier Redistribution

Determination of the layered structure of baryta based heritage photographs by infrared ellipsometry

2019 ◽  
Vol 36 ◽  
pp. 174-182
Author(s):  
J.M. Flores-Camacho ◽  
A. Nieto-Villena ◽  
J.R. Martínez ◽  
J.A. de la Cruz-Mendoza ◽  
G. Ortega-Zarzosa ◽  
...  
Keyword(s):  
Layered Structure ◽  
Infrared Ellipsometry

scholarly journals Bandgap Tunability in a One-Dimensional System

2018 ◽  
Vol 3 (4) ◽  
pp. 34
Author(s):  
Payal Wadhwa ◽  
Shailesh Kumar ◽  
T.J. Kumar ◽  
Alok Shukla ◽  
Rakesh Kumar
Keyword(s):  
Solar Cells ◽  
Periodic Potential ◽  
Functional Group ◽  
Potential Profile ◽  
Dimensional System ◽  
Natural Polymers ◽  
One Dimensional ◽  
Direct Bandgap ◽  
Inorganic Systems ◽  
Theoretical Investigations

The ability to tune the gaps of direct bandgap materials has tremendous potential for applications in the fields of LEDs and solar cells. However, lack of reproducibility of bandgaps due to quantum confinement observed in experiments on reduced dimensional materials, severely affects tunability of their bandgaps. In this article, we report broad theoretical investigations of direct bandgap one-dimensional functionalized isomeric system using their periodic potential profile, where bandgap tunability is demonstrated simply by modifying the potential profile by changing the position of the functional group in a periodic supercell. We found that bandgap in one-dimensional isomeric systems having the same functional group depends upon the width and depth of the deepest potential well at global minimum and derived correlations are verified for known synthetic as well as natural polymers (biological and organic), and also for other one-dimensional direct bandgap systems. This insight would greatly help experimentalists in designing new isomeric systems with different bandgap values for polymers and one-dimensional inorganic systems for possible applications in LEDs and solar cells.

scholarly journals First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Future Application ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

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