Bonding structure of carbon nitride films by infrared ellipsometry

2001 ◽  
Vol 64 (12) ◽  
Author(s):  
A. Laskarakis ◽  
S. Logothetidis ◽  
M. Gioti
Keyword(s):  
Carbon Nitride ◽  
Bonding Structure ◽  
Infrared Ellipsometry

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

Effect of substrate bias on the bonding structure of carbon nitride thin films

1999 ◽  
Vol 355-356 ◽  
pp. 85-88 ◽  
Author(s):  
A.K.M.S. Chowdhury ◽  
D.C. Cameron ◽  
M.A. Monclus
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Substrate Bias ◽  
Bonding Structure

Correlation between bonding structure and mechanical properties of amorphous carbon nitride thin films

2000 ◽  
Vol 125 (1-3) ◽  
pp. 284-288 ◽  
Author(s):  
C. Quirós ◽  
R. Núñez ◽  
P. Prieto ◽  
I. Vergara ◽  
D. Cáceres ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Bonding Structure ◽  
Amorphous Carbon Nitride

Variation of bonding structure near the surface of carbon nitride films

2000 ◽  
Vol 158 (3-4) ◽  
pp. 340-344 ◽  
Author(s):  
Liudi Jiang ◽  
A.G Fitzgerald ◽  
M.J Rose
Keyword(s):  
Carbon Nitride ◽  
Bonding Structure

Influence of ions energy on the bonding structure of amorphous carbon nitride films

2001 ◽  
Vol 70 (2) ◽  
pp. 245-248 ◽  
Author(s):  
Aixiang Wei ◽  
Dihu Chen ◽  
Youguo Zhou ◽  
Peixing Lin ◽  
Zenghong Yang ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Bonding Structure ◽  
Amorphous Carbon Nitride

Bonding structure of carbon nitride films deposited by reactive plasma beam sputtering

2001 ◽  
Vol 10 (3-7) ◽  
pp. 1142-1146 ◽  
Author(s):  
B Angleraud ◽  
N Mubumbila ◽  
P.Y Tessier ◽  
V Fernandez ◽  
G Turban
Keyword(s):  
Carbon Nitride ◽  
Plasma Beam ◽  
Bonding Structure ◽  
Reactive Plasma ◽  
Beam Sputtering

Nitrogen bonding structure in carbon nitride thin films studied by soft x-ray spectroscopy

2001 ◽  
Vol 79 (26) ◽  
pp. 4348-4350 ◽  
Author(s):  
Niklas Hellgren ◽  
Jinghua Guo ◽  
Conny Såthe ◽  
Akane Agui ◽  
Joseph Nordgren ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
X Ray ◽  
Bonding Structure

Thermal stability of carbon nitride thin films

2001 ◽  
Vol 16 (11) ◽  
pp. 3188-3201 ◽  
Author(s):  
Niklas Hellgren ◽  
Nian Lin ◽  
Esteban Broitman ◽  
Virginie Serin ◽  
Stefano E. Grillo ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Amorphous Structure ◽  
X Ray ◽  
Bonding Structure ◽  
Higher Temperature ◽  
Electron Energy Loss ◽  
Thermal Stability Of

The thermal stability of carbon nitride films, deposited by reactive direct current magnetron sputtering in N2 discharge, was studied for postdeposition annealing temperatures TA up to 1000 °C. Films were grown at temperatures of 100 °C (amorphous structure) and 350 and 550 °C (fullerenelike structure) and were analyzed with respect to thickness, composition, microstructure, bonding structure, and mechanical properties as a function of TA and annealing time. All properties investigated were found to be stable for annealing up to 300 °C for long times (>48 h). For higher TA, nitrogen is lost from the films and graphitization takes place. At TA = 500 °C the graphitization process takes up to 48 h while at TA = 900 °C it takes less than 2 min. A comparison on the evolution of x-ray photoelectron spectroscopy, electron energy loss spectroscopy and Raman spectra during annealing shows that for TA > 800 °C, preferentially pyridinelike N and –C≡N is lost from the films, mainly in the form of molecular N2 and C2N2, while N substituted in graphite is preserved the longest in the structure. Films deposited at the higher temperature exhibit better thermal stability, but annealing at temperatures a few hundred degrees Celsius above the deposition temperature for long times is always detrimental for the mechanical properties of the films.

SEMICONDUCTING AMORPHOUS CAMPHORIC CARBON NITRIDE THIN FILMS

2005 ◽  
Vol 12 (04) ◽  
pp. 587-595 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO ◽  
M. SHARON
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Nitrogen Content ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Amorphous Structure ◽  
Nitrogen Gas ◽  
Force Microscopy ◽  
Bonding Structure ◽  
High Electrical Resistivity

Amorphous carbon nitride ( a-CN x) films have been deposited by pulsed laser deposition at 0.8 Torr nitrogen gas ambient with varying substrate temperature from 20 to 500°C. The effects of the substrate temperature and ambient nitrogen gas pressure on the surface morphology, composition, nitrogen content, structure, and electrical properties of the a-CN x thin films have been investigated. The deposited a-CN x films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-Visible transmittance, and four-probe resistance measurement. It is found that the amorphous structure of a-CN x films can be changed by the substrate temperature (ST) and the a-CN x films with high nitrogen content have relatively high electrical resistivity. Also, graphitization is found to cause the reduction of nitrogen content and changes in the bonding structure of nitrogen atoms in the films.

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