scholarly journals Investigations of the surface chemistry of silicon substrates etched in a rf-biased inductively coupled fluorocarbon plasma using Fourier-transform infrared ellipsometry

1998 ◽  
Vol 16 (1) ◽  
pp. 225-232 ◽  
Author(s):  
G. M. W. Kroesen ◽  
Ho-Jun Lee ◽  
Hiroshi Moriguchi ◽  
Hideki Motomura ◽  
Tatsuru Shirafuji ◽  
...  
1986 ◽  
Vol 58 (1) ◽  
pp. 64-68 ◽  
Author(s):  
Robert T. Graf ◽  
Jack L. Koenig ◽  
Hatsuo. Ishida

2016 ◽  
Vol 698 ◽  
pp. 13-18 ◽  
Author(s):  
Koichi Tanaka ◽  
Taichi Yoshida

We fabricated Si:SiO2 films and assessed its characterization of photoluminescence and surface chemistry. When Si tablets on a SiO2 target were sputtered in a chamber of a radio frequency sputtering device, Si:SiO2 films were deposited on a substrate. When the films were excited by a He-Cd laser, photoluminescence having wide and continuous peaks was emitted in shorter region than 600 nm. After annealing, intensity of photoluminescence changed, which depends on annealing temperature and time. By the Fourier Transform InfraRed Spectroscopy, bonds of atoms around Si were investigated.


2002 ◽  
Vol 41 (34) ◽  
pp. 7339 ◽  
Author(s):  
Enric Garcia-Caurel ◽  
Bernard Drévillon ◽  
Antonello De Martino ◽  
Laurent Schwartz

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