Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate

2018 ◽  
Vol 113 (18) ◽  
pp. 182103 ◽  
Author(s):  
A. A. Nikolskaya ◽  
D. S. Korolev ◽  
A. N. Mikhaylov ◽  
A. I. Belov ◽  
A. A. Sushkov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Light Emitting

&[mu]-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate

2007 ◽  
Vol 989 ◽  
Author(s):  
Gong-Ru Lin ◽  
Chun-Jung Lin
Keyword(s):  
Light Emitting Diode ◽  
Optical Power ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Light Emitting ◽  
Pillar Array ◽  
Turn On ◽  
Air Interface ◽  
Order Of Magnitude ◽  
Etching Mask

AbstractA Si nanocrystal based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nano-pillar array is preliminarily demonstrated. Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is employed as the etching mask for obtaining Si nano-pillar array. Dense Ni nanodots with size and density of 30 nm and 2.8×10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. The nano-roughened Si surface contributes to both the relaxation of total-internal reflection at device-air interface and the Fowler-Nordheim tunneling enhanced turn-on characteristics, providing the MOSLED a maximum optical power of 0.7 uW obtained at biased current of 375 uA. The optical intensity, turn-on current, power slope and external quantum efficiency of the MOSLED are 140 μW/cm2, 5 uA, 2+-0.8 mW/A and 1×10-3, respectively, which is almost one order of magnitude larger than that of a same device made on smooth Si substrate.

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

Direct graphene synthesis on SiO2/Si substrate by ion implantation

2013 ◽  
Vol 102 (19) ◽  
pp. 193102 ◽  
Author(s):  
R. Zhang ◽  
Z. S. Wang ◽  
Z. D. Zhang ◽  
Z. G. Dai ◽  
L. L. Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Graphene Synthesis

(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

2014 ◽  
Vol 61 (4) ◽  
pp. 71-78
Author(s):  
S.-J. Lee ◽  
H.-J. Park ◽  
J.-B. Park ◽  
D.-W. Jeon ◽  
J. H. Baek ◽  
...  
Keyword(s):  
Large Scale ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
High Brightness ◽  
Light Emitting

Light emitting devices in the visible obtained by PECVD and ion implantation

2007 ◽  
Author(s):  
M. Peralvarez ◽  
J. Barreto ◽  
O. Jambois ◽  
J. Carreras ◽  
C. Dominguez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Ion implantation isolation based micro-light-emitting diode device array properties

2020 ◽  
Vol 69 (2) ◽  
pp. 027802
Author(s):  
Cheng-Hao Gao ◽  
Feng Xu ◽  
Li Zhang ◽  
De-Sheng Zhao ◽  
Xing Wei ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Light Emitting Diode ◽  
Light Emitting

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

2011 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Da-Wei Lin ◽  
Zhen-Yu Li ◽  
Shih-Chun Ling ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting
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