(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

2014 ◽  
Vol 61 (4) ◽  
pp. 71-78
Author(s):  
S.-J. Lee ◽  
H.-J. Park ◽  
J.-B. Park ◽  
D.-W. Jeon ◽  
J. H. Baek ◽  
...  
Keyword(s):  
Large Scale ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
High Brightness ◽  
Light Emitting

High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

2015 ◽  
Vol 4 (8) ◽  
pp. Q92-Q95 ◽  
Author(s):  
Seung-Jae Lee ◽  
Jae-Chul Song ◽  
Hyung-Jo Park ◽  
Jun-Beom Park ◽  
Seong-Ran Jeon ◽  
...  
Keyword(s):  
Large Scale ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
High Brightness ◽  
Light Emitting

scholarly journals Near Unity PLQY and High Stability of Barium Thiocyanate Based All-Inorganic Perovskites and Their Applications in White Light-Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 209
Author(s):  
Gopi Chandra Adhikari ◽  
Saroj Thapa ◽  
Yang Yue ◽  
Hongyang Zhu ◽  
Peifen Zhu
Keyword(s):  
White Light ◽  
Large Scale ◽  
Light Emitting Diode ◽  
Photophysical Properties ◽  
Environmental Stability ◽  
Color Temperature ◽  
Ambient Atmosphere ◽  
Light Emitting ◽  
Halide Perovskite ◽  
Lead Halide

All-inorganic lead halide perovskite (CsPbX3) nanocrystals (NCs) have emerged as a highly promising new generation of light emitters due to their extraordinary photophysical properties. However, the performance of these semiconducting NCs is undermined due to the inherent toxicity of lead and long-term environmental stability. Here, we report the addition of B-site cation and X-site anion (pseudo-halide) concurrently using Ba(SCN)2 (≤50%) in CsPbX3 NCs to reduce the lead and improve the photophysical properties and stability. The as-grown particles demonstrated an analogous structure with an almost identical lattice constant and a fluctuation of particle size without altering the morphology of particles. Photoluminescence quantum yield is enhanced up to near unity (~98%) by taking advantage of concomitant doping at the B- and X-site of the structure. Benefitted from the defect reductions and stronger bonding interaction between Pb2+ and SCN− ions, Ba(SCN)2-based NCs exhibit improved stability towards air and moisture compared to the host NCs. The doped NCs retain higher PLQY (as high as seven times) compared to the host NCs) when stored in an ambient atmosphere for more than 176 days. A novel 3D-printed multiplex color conversion layer was used to fabricate a white light-emitting diode (LED). The obtained white light shows a correlated color temperature of 6764 K, a color rendering index of 87, and luminous efficacy of radiation of 333 lm/W. In summary, this work proposes a facile route to treat sensitive lead halide perovskite NCs and to fabricate LEDs by using a low-cost large-scale 3-D printing method, which would serve as a foundation for fabricating high-quality optoelectronic devices for near future lighting technologies.

&[mu]-Watt Enhanced Electroluminescent Power of Silicon Nanocrystal Light-Emitting Diodes Made on Nano-Scale Silicon-Tip-Array Substrate

2007 ◽  
Vol 989 ◽  
Author(s):  
Gong-Ru Lin ◽  
Chun-Jung Lin
Keyword(s):  
Light Emitting Diode ◽  
Optical Power ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Light Emitting ◽  
Pillar Array ◽  
Turn On ◽  
Air Interface ◽  
Order Of Magnitude ◽  
Etching Mask

AbstractA Si nanocrystal based metal-oxide-semiconductor light-emitting diode (MOSLED) on Si nano-pillar array is preliminarily demonstrated. Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is employed as the etching mask for obtaining Si nano-pillar array. Dense Ni nanodots with size and density of 30 nm and 2.8×10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s. The nano-roughened Si surface contributes to both the relaxation of total-internal reflection at device-air interface and the Fowler-Nordheim tunneling enhanced turn-on characteristics, providing the MOSLED a maximum optical power of 0.7 uW obtained at biased current of 375 uA. The optical intensity, turn-on current, power slope and external quantum efficiency of the MOSLED are 140 μW/cm2, 5 uA, 2+-0.8 mW/A and 1×10-3, respectively, which is almost one order of magnitude larger than that of a same device made on smooth Si substrate.

High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolarm-plane Bulk GaN Substrate

2007 ◽  
Vol 46 (No. 40) ◽  
pp. L960-L962 ◽  
Author(s):  
Kenji Iso ◽  
Hisashi Yamada ◽  
Hirohiko Hirasawa ◽  
Natalie Fellows ◽  
Makoto Saito ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
High Brightness ◽  
Light Emitting ◽  
Bulk Gan

Design of Light Emitting Diodes (LEDs) Lighting System and Its Application in Garden Landscape Decoration

2020 ◽  
Vol 15 (6) ◽  
pp. 734-742
Author(s):  
Hailiang Liu ◽  
Jiade Cheng ◽  
Asnidar Hanim Yusuf
Keyword(s):  
Control System ◽  
Large Scale ◽  
Light Emitting Diode ◽  
Image Data ◽  
Junction Temperature ◽  
Lighting System ◽  
Light Emitting ◽  
Led Lighting ◽  
Arm Processor ◽  
Control Node

Light Emitting Diode (LED) is widely used in garden landscape decoration because of its small size, low power, concentrated light, and the capability of showing more vivid colors. While designing the LED lighting system, considering that a single Advanced RISC Machine (ARM)-based control system cannot achieve large-scale LED display, and a single Field Programmable Gate Array (FPGA)-based control system cannot control the lighting system well, an LED system with the combination of ARM processor-FPGA is proposed. In this system, the ARM processor is used as the major control component. The Linux system realizes remote monitoring and intelligent management of image data. In addition, FPGA is used for LED data output. The lighting system consists of a major control node and a lighting node. The nodes are connected in parallel through a chain network. The major control node uses an ARM Cortex processor and is equipped with a Linux operating system. The lighting node uses ARM + FPGA hardware architecture. During the experiments, the LED lighting system is tested first. The results show that the reading and writing speed is fast. The LED display screen meets the lighting requirements. This LED lighting system is used for night lighting of garden landscapes. During the brightness test, the brightness of lighting objects and the background is used as research objects. Experiments have proved that the ratio of the lighting object brightness to the background brightness between (Yu, M. and Li, X., 2012. A little current k-factor method for measuring junction temperature of aviation lighting power led. Guangxue Jishu/Optical Technique, 38(3), pp.371–375; Monas, A., Verma, A., Gawari, A. and Paswan, R. S., 2016. Portable network monitor using arm processor. Procedia Computer Science, 92, pp.493–497.) is suitable for night lighting of garden landscape decoration, which will not bring discomfort to people who enjoy night scenery.

A Yellow InGaP Light Emitting Diode Epitaxially Grown on Si Substrate

2015 ◽  
Author(s):  
Cong Wang ◽  
Bing Wang ◽  
Kenneth Eng Kian Lee ◽  
Soon Fatt Yoon ◽  
Jurgen Michel
Keyword(s):  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting

UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections

2017 ◽  
Vol 42 (21) ◽  
pp. 4533 ◽  
Author(s):  
Zi-Hui Zhang ◽  
Chunshuang Chu ◽  
Ching Hsueh Chiu ◽  
Tien Chang Lu ◽  
Luping Li ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Si Substrate ◽  
Light Emitting ◽  
Uva Light

Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film

2009 ◽  
Vol 21 (27) ◽  
pp. 2767-2770 ◽  
Author(s):  
Xiao-Mei Zhang ◽  
Ming-Yen Lu ◽  
Yue Zhang ◽  
Lih-J. Chen ◽  
Zhong Lin Wang
Keyword(s):  
Thin Film ◽  
Blue Light ◽  
Light Emitting Diode ◽  
Nanowire Array ◽  
Zno Nanowire ◽  
High Brightness ◽  
Light Emitting
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