Direct graphene synthesis on SiO2/Si substrate by ion implantation

2013 ◽  
Vol 102 (19) ◽  
pp. 193102 ◽  
Author(s):  
R. Zhang ◽  
Z. S. Wang ◽  
Z. D. Zhang ◽  
Z. G. Dai ◽  
L. L. Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Graphene Synthesis

Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate

2018 ◽  
Vol 113 (18) ◽  
pp. 182103 ◽  
Author(s):  
A. A. Nikolskaya ◽  
D. S. Korolev ◽  
A. N. Mikhaylov ◽  
A. I. Belov ◽  
A. A. Sushkov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Si Substrate ◽  
Light Emitting

Silver Negative-Ion Implantation into Thermally Grown Thin SiO2Film on Si Substrate and Heat Treatment for Formation of Silver Nanoparticles

2007 ◽  
Vol 46 (9B) ◽  
pp. 6260-6266 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Kouichirou Adachi ◽  
Hiroshi Kotaki ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Silver Nanoparticles ◽  
Ion Implantation ◽  
Negative Ion ◽  
Si Substrate ◽  
Thermally Grown

Effects of Ion Implantation Doping on the Formation of Titanium Silicide on the Diffusion Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
H. Matsui ◽  
H. Ohtsuki ◽  
M. Ino ◽  
S. Ushio
Keyword(s):  
Ion Implantation ◽  
Oxide Films ◽  
Titanium Silicide ◽  
Si Substrate ◽  
Surface Layers ◽  
Critical Dose ◽  
Diffusion Layers

ABSTRACTSi samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

Reduction in the Effective Barrier Height in Ptsi-P-Si Schottky Diodes by Using Low Energy Ion Implantation

1981 ◽  
Vol 10 ◽  
Author(s):  
C.-Y. Wei ◽  
W. Tantraporn ◽  
W. Katz ◽  
G. Smith
Keyword(s):  
Ion Implantation ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Low Energy ◽  
Si Substrate ◽  
Effective Barrier Height ◽  
Effective Barrier

A reduction in the effective barrier height in a PtSi-p-Si Schottky diode was achieved using low energy ion implantation to introduce a shallow p+ layer on a p-Si substrate. After the Schottky diode had been implanted with 3 keV 11B+ ions to a dose of 4 × 1012 ions cm−2, the barrier height was observed to decrease from 0.26 to 0.16eV. The reduction in barrier height correlated well with the boronconcentration found at or near the PtSi-Si interface.

Computer Simulation of Decaborane Implantation into Silicon, Annealing and Re-crystallization of Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Zinetulla Insepov ◽  
Isao Yamada
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Ion Implantation ◽  
Energy Range ◽  
Linear Dependence ◽  
Md Simulation ◽  
Relaxation Technique ◽  
Si Substrate ◽  
Implantation Process ◽  
Impact Energies

ABSTRACTMolecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5- 15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies ofthe investigated range of the decaborane energy range, however, a linear dependence is observed in accordancewith the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study re-crystallization of Si amorphized in the implantation process.

Cryo-Implantation Technology for Controlling Defects and impurity out diffusion

2000 ◽  
Vol 610 ◽  
Author(s):  
Atsushi Murakoshi ◽  
Kyoichi Suguro ◽  
Masao Iwase ◽  
Mitsuhiro Tomita ◽  
Katsuya Okumura
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Junction Depth ◽  
Si Substrate ◽  
Enhanced Diffusion ◽  
Pn Junction ◽  
Order Of Magnitude

AbstractWe propose a novel process module by using cryo-implantation and rapid thermal annealing (RTA). Boron or arsenic ions were implanted into a 8 inch (100) Si substrate which was cooled by using liquid nitrogen. The substrate temperature was controlled to be below at -160°C during ion implantation. It was found that an amorphous layer was formed by boron or arsenic implantation and the amorphous layer was completely recovered to a single crystal after annealing at 900°C for 30sec. No dislocation was observed in the implanted layer. It was also found that the thermal diffusion of boron was suppressed by cryo-implantation. PN junction depth was found to be about 10-20% shallower than that of room temperature implantation. These results suggest that transient enhanced diffusion of boron can be reduced by suppressing vacancy migration toward the surface during implantation. Cryo-implantation was found to be very effective in reducing defects and PN junction leakage was successfully reduced by one order of magnitude as compared with room temperature implantation.

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