Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

2011 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Da-Wei Lin ◽  
Zhen-Yu Li ◽  
Shih-Chun Ling ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting

scholarly journals Efficiency droop in blue InGaN/GaN light emitting diodes on Si substrate

2012 ◽  
Vol 61 (17) ◽  
pp. 178503
Author(s):  
Liu Mu-Lin ◽  
Min Qiu-Ying ◽  
Ye Zhi-Qing
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Si Substrate ◽  
Light Emitting

Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate

2011 ◽  
Vol 47 (7) ◽  
pp. 899-906 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Chien-Chung Lin ◽  
Dong-Mei Deng ◽  
Da-Wei Lin ◽  
Jin-Chai Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Light Emitting Diodes ◽  
Optical And Electrical Properties ◽  
Si Substrate ◽  
Light Emitting ◽  
Nano Scale

Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate

2011 ◽  
Vol 47 (13) ◽  
pp. 765-767 ◽  
Author(s):  
A.-L. Bavencove ◽  
P. Gilet ◽  
A. Dussaigne ◽  
Le Si Dang ◽  
B. Martin ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Core Shell ◽  
Si Substrate ◽  
Light Emitting

High performance blue light-emitting diodes on patterned Si substrate

2008 ◽  
Author(s):  
Zhanguo Li ◽  
Guojun Liu ◽  
Minghui You ◽  
Lin Li ◽  
Mei Li ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

ACS Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 1453-1459 ◽  
Author(s):  
Moonsang Lee ◽  
Mino Yang ◽  
Keun Man Song ◽  
Sungsoo Park
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting

scholarly journals Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 543 ◽  
Author(s):  
Moonsang Lee ◽  
Hyunkyu Lee ◽  
Keun Song ◽  
Jaekyun Kim
Keyword(s):  
Leakage Current ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Characteristics ◽  
Recombination Current

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.

Stable Operation of AlGaAs/GaAs Light-Emitting Diodes Fabricated on Si Substrate

1992 ◽  
Vol 31 (Part 2, No. 2A) ◽  
pp. L78-L81 ◽  
Author(s):  
Naoki Wada ◽  
Shinichi Yoshimi ◽  
Shiro Sakai ◽  
Chun Lin Shao ◽  
Masuo Fukui
Keyword(s):  
Light Emitting Diodes ◽  
Stable Operation ◽  
Si Substrate ◽  
Light Emitting

scholarly journals Separation of III-N partially-coalesced nanowire arrays from Si substrate

2021 ◽  
Vol 2086 (1) ◽  
pp. 012191
Author(s):  
V V Lendyashova ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
R R Reznik ◽  
A I Lihachev ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Etching ◽  
Light Emitting Diodes ◽  
Single Photon ◽  
Nanowire Arrays ◽  
Si Substrate ◽  
Light Emitting ◽  
Dense Arrays ◽  
Photon Sources ◽  
Single Nanowires

Abstract In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

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