Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6–8.3) eV

2018 ◽  
Vol 113 (17) ◽  
pp. 172102 ◽  
Author(s):  
Evgeny Krüger ◽  
Vitaly Zviagin ◽  
Chang Yang ◽  
Chris Sturm ◽  
Rüdiger Schmidt-Grund ◽  
...  
2014 ◽  
Vol 105 (11) ◽  
pp. 111906 ◽  
Author(s):  
R. Schmidt-Grund ◽  
H. Krauß ◽  
C. Kranert ◽  
M. Bonholzer ◽  
M. Grundmann

2015 ◽  
Vol 117 (16) ◽  
pp. 165307 ◽  
Author(s):  
R. Schmidt-Grund ◽  
C. Kranert ◽  
H. von Wenckstern ◽  
V. Zviagin ◽  
M. Lorenz ◽  
...  

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


1995 ◽  
Vol 38 (5) ◽  
pp. 949-959 ◽  
Author(s):  
S Scheinert ◽  
G Paasch ◽  
D Schipanski

1997 ◽  
Vol 81 (8) ◽  
pp. 3952-3954 ◽  
Author(s):  
Tao Pan ◽  
Geoffrey W. D. Spratt ◽  
Li Tang ◽  
Li-Lien Lee ◽  
Yongchang Feng ◽  
...  

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