scholarly journals Dielectric function in the spectral range (0.5–8.5)eV of an (Alx Ga1−x)2O3 thin film with continuous composition spread

2015 ◽  
Vol 117 (16) ◽  
pp. 165307 ◽  
Author(s):  
R. Schmidt-Grund ◽  
C. Kranert ◽  
H. von Wenckstern ◽  
V. Zviagin ◽  
M. Lorenz ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Function ◽  
Spectral Range

Temperature dependence of the dielectric function of thin film CuI in the spectral range (0.6–8.3) eV

2018 ◽  
Vol 113 (17) ◽  
pp. 172102 ◽  
Author(s):  
Evgeny Krüger ◽  
Vitaly Zviagin ◽  
Chang Yang ◽  
Chris Sturm ◽  
Rüdiger Schmidt-Grund ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Dielectric Function ◽  
Spectral Range

scholarly journals Temperature dependence of the dielectric function in the spectral range (0.5–8.5) eV of an In2O3 thin film

2014 ◽  
Vol 105 (11) ◽  
pp. 111906 ◽  
Author(s):  
R. Schmidt-Grund ◽  
H. Krauß ◽  
C. Kranert ◽  
M. Bonholzer ◽  
M. Grundmann
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Dielectric Function ◽  
Spectral Range

From Semiconductor to Metal in a Flash: Observing Ultrafast Laser-Induced Phase Transformations

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur
Keyword(s):  
Phase Transformations ◽  
Dielectric Function ◽  
Spectral Range ◽  
Laser Excitation ◽  
Spectroscopic Technique ◽  
Ultrafast Laser ◽  
Lattice Heating ◽  
Fs Laser

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.

Optical Functions of Thin-Film Polycrystalline Chalcopyrite CuIn1-xGaxSe2

2003 ◽  
Vol 763 ◽  
Author(s):  
Sung-Ho Han ◽  
Dean H. Levi ◽  
Hamda A. Althani ◽  
Falah S. Hasoon ◽  
Raghu N. Bhattacharya ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Function ◽  
Layer Structure ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Optical Functions ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Cigs Solar Cells ◽  
Compare And Contrast

AbstractThe highest efficiency CuIn1-xGaxSe2 (CIGS) solar cells use thin-film polycrystalline CIGS absorber layers. We have applied variable angle spectroscopic ellipsometry (VASE) to characterize the dielectric functions of polycrystalline thin films of CIGS with Ga: (In + Ga) ratios ranging from 0.18 to 1.0. The Cu: (In + Ga) ratios in these films are approximately 0.90, which is the ratio that yields the highest efficiency CIGS devices. Spectra were measured over the energy range 0.7 to 5.0 eV at room temperatures. Models used to analyze the ellipsometry data include the full multi-layer structure of the sample, which enables us to report the actual dielectric function rather than the pseudo-dielectric function. We present data on how the critical points change with composition, and compare and contrast our results with measurements of single-crystal and bulk polycrystalline samples reported in the literature. Auger electron spectroscopy, atomic force microscopy, and X-ray diffraction have been used to verify the homogeneity, surface roughness, and phase purity, respectively.

Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range

2019 ◽  
Vol 115 (21) ◽  
pp. 212103 ◽  
Author(s):  
O. Herrfurth ◽  
T. Pflug ◽  
M. Olbrich ◽  
M. Grundmann ◽  
A. Horn ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectral Range ◽  
Time Resolved ◽  
Near Ir ◽  
Time Resolved Imaging

Validation of thin film TiO2 optical constants by reflectometry and ellipsometry in the VUV spectral range

2019 ◽  
Vol 30 (4) ◽  
pp. 045201 ◽  
Author(s):  
Alexander Gottwald ◽  
Karl Wiese ◽  
Thomas Siefke ◽  
Mathias Richter
Keyword(s):  
Thin Film ◽  
Spectral Range ◽  
Optical Constants

Parameterization of Dielectric Functions and Phase Transitions of SrTiO3 from 26 to 674 K

2020 ◽  
Vol 20 (11) ◽  
pp. 6692-6697
Author(s):  
Tae Jung Kim ◽  
Van Long Le ◽  
Han Gyeol Park ◽  
Hoang Tung Nguyen ◽  
XuanAu Nguyen ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Dielectric Function ◽  
Spectral Range ◽  
Refractive Indices ◽  
Device Design ◽  
Lorentz Model ◽  
Cubic Polynomials

We present parameters that allow the dielectric function (ε = ε1 + iε2) of perovskite SrTiO3 (STO) to be calculated for spectral range from 0.74 to 6.42 eV and temperatures from 26 to 674 K. The ε data of STO were reproduced from a previous report. We use the Tauc-Lorentz model to express ε of STO analytically for each temperature. The ε spectra are successfully parameterized with six Tauc-Lorentz components and a pole. To obtain ε data for arbitrary energies and temperatures over the range given above, we interpolated the parameterized results using cubic polynomials. It is well known that STO has phase transitions near 40 and 105 K, which are reflected well in our modeling. Our data allow complex refractive indices to be calculated at any temperature for device design.

The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry

1982 ◽  
Vol 14 ◽  
Author(s):  
Jinshen Luo ◽  
P.J. Mc Marr ◽  
K. Vedam
Keyword(s):  
Dielectric Function ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Ion Implanted

ABSTRACTWe have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].

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