Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

2018 ◽  
Author(s):  
Sukhdeep Singh ◽  
Janpreet Singh ◽  
S. K. Tripathi
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Annealing Effects ◽  
P Type

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Enhanced thermoelectric performance of P-type Sb2Te3 thin films through organic-inorganic hybridization on flexible substrate

2019 ◽  
Vol 19 (4) ◽  
pp. 470-474 ◽  
Author(s):  
Zhuang-hao Zheng ◽  
Jing-ting Luo ◽  
Feng Li ◽  
Guang-xing Liang ◽  
Ping Fan
Keyword(s):  
Thin Films ◽  
Flexible Substrate ◽  
Thermoelectric Performance ◽  
P Type

Enhanced transmittance and mobility of p-type copper iodide thin films prepared at room temperature via a layer-by-layer approach

2019 ◽  
Vol 361 ◽  
pp. 396-402 ◽  
Author(s):  
Fangjuan Geng ◽  
Lei Yang ◽  
Bing Dai ◽  
Shuai Guo ◽  
Gang Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Layer By Layer ◽  
Copper Iodide ◽  
P Type

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

Study of the Defect Levels and Interface Properties of CdTe and CdS Polycrystalline Thin Films

1991 ◽  
Vol 238 ◽  
Author(s):  
F. Abou-Elfotouh ◽  
S. Ashour ◽  
S. A. Alkuhaimi ◽  
J. Zhang ◽  
D. J. Dunlavy ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deep Trap ◽  
Cdte Film ◽  
Interface States ◽  
Polycrystalline Thin Films ◽  
Deviation From Stoichiometry ◽  
Electrochemically Deposited ◽  
Defect Levels ◽  
P Type

ABSTRACTThe properties (electrical and structural) and the defect levels dominating cadmium telluride (CdTe) films prepared by radio frequency (rf) planar magnetron sputtering, and electrochemical deposition have been determined and compared. The properties of the deposited CdTe film and the behavior of its interface with cadmium sulfide (CdS) depend strongly on the method of depositing the CdTe film, and on postdeposition heat treatments. These treatments determine various parameters crucial to the device performance, including the type and concentration of the dominant defects, interface states, and deep trap levels. Photoluminescence (PL) emission from p-type CdTe polycrystalline thin films and single crystals is reported at low temperatures (9–50 K) as well as at room temperature. The room temperature PL peak at 1.58 eV due to band-to-band recombination was observed for the first time in polycrystalline thin films. The peak location of the exciton emission is indicative of the structure perfection of the film, which is also related to the deviation from stoichiometry. The as-grown polycrystalline films are composed of a close-packed array of preferentially oriented (the [100], [110], and [111] axes aligned perpendicular to the substrate) single-crystal grains of a size in the range of 0.25–2.0 μm for the electrochemically deposited films (E-film) and 0.3–4.0 μm for rf sputtered material (rf-film). The resistivity of the heat treated E-film was substantially lower than that of the rf-film (ρ = 1.0–5.0 and 300–500 Ωcm). The performance of the CdS/(E-CdTe) devices is limited by deep levels, while the performance of die rf-CdTe device is affected by a high density of interface states.

scholarly journals Large n- and p-type thermoelectric power factors from doped semiconducting single-walled carbon nanotube thin films

2017 ◽  
Vol 10 (10) ◽  
pp. 2168-2179 ◽  
Author(s):  
Bradley A. MacLeod ◽  
Noah J. Stanton ◽  
Isaac E. Gould ◽  
Devin Wesenberg ◽  
Rachelle Ihly ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Thermoelectric Power ◽  
Thermoelectric Performance ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Large N ◽  
P Type ◽  
Carbon Nanotube Networks

Polymer-free semiconducting carbon nanotube networks demonstrate unprecedented equivalent n- and p-type thermoelectric performance.

scholarly journals Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 23 (3) ◽  
Author(s):  
Raul Ramos ◽  
Marcio Peron Franco de Godoy ◽  
Elidiane Cipriano Rangel ◽  
Nilson Cristino da Cruz ◽  
Steven F. Durrant ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
P Type ◽  
Co Doped

High thermoelectric performance of n-type Bi2Te2.7Se0.3via nanostructure engineering

2018 ◽  
Vol 6 (20) ◽  
pp. 9642-9649 ◽  
Author(s):  
D. Li ◽  
J. M. Li ◽  
J. C. Li ◽  
Y. S. Wang ◽  
J. Zhang ◽  
...  
Keyword(s):  
Thermoelectric Material ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Commercial Applications ◽  
P Type

BiSbTe has been realized as an ideal p-type thermoelectric material near room temperature; however, its commercial applications are largely restricted by its n-type counterpart that exhibits relatively inferior thermoelectric performance.

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