scholarly journals Large n- and p-type thermoelectric power factors from doped semiconducting single-walled carbon nanotube thin films

2017 ◽  
Vol 10 (10) ◽  
pp. 2168-2179 ◽  
Author(s):  
Bradley A. MacLeod ◽  
Noah J. Stanton ◽  
Isaac E. Gould ◽  
Devin Wesenberg ◽  
Rachelle Ihly ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Thermoelectric Power ◽  
Thermoelectric Performance ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Large N ◽  
P Type ◽  
Carbon Nanotube Networks

Polymer-free semiconducting carbon nanotube networks demonstrate unprecedented equivalent n- and p-type thermoelectric performance.

scholarly journals Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 83-88
Author(s):  
Huaping Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotube ◽  
Large Scale ◽  
Solution Process ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Schottky Type ◽  
P Type ◽  
Metallic Impurities

Abstract Carbon nanotube thin film transistors (TFTs) with characteristics resembling those of TFTs constructed on amorphous silicon, low-temperature polycrystalline silicon and metal oxides were fabricated on (6,5) single chirality single-walled carbon nanotube (SWCNT) thin film deposited from electronically pure semiconducting (6,5) single chirality single-walled carbon nanotube (SWCNT) ink. This ink was extracted in industrial scale from raw SWCNTs produced using high pressure carbon monoxide conversion, and deposited on pretreated substrates to form uniform and consistent (6,5) HiPCO SWCNT thin film using solution process. The (6,5) HiPCO SWCNT thin films were characterized as pure semiconductor without metallic impurities showing classic nonlinear current-bias curves in Schottky-type diodes. Both N-type and P-type (6,5) HiPCO SWCNT TFTs were fabricated with femto Ampere off-current and ION/IOFF ratio of 108 by depositing SiNx and HfO2 dielectrics on the top of (6,5) HiPCO SWCNT thin films, respectively. The (6,5) HiPCO SWCNT inverter with voltage gain of 52 was also demonstrated by wire-bonding one P-type HiPCO SWCNT TFT to one N-type HiPCO SWCNT TFT.

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

2014 ◽  
Vol 118 (46) ◽  
pp. 26454-26461 ◽  
Author(s):  
Mingxing Piao ◽  
Min-Kyu Joo ◽  
Junhong Na ◽  
Yun-Jeong Kim ◽  
Mireille Mouis ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Thermoelectric Power ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Networks

Fabrication of Three-Dimensional Single-Walled Carbon Nanotube Networks Suspended on Si Pillar Architecture

2017 ◽  
Vol 17 (8) ◽  
pp. 5900-5902
Author(s):  
Jongtaek Lee ◽  
Junyoung Lee ◽  
Jonghee Yang ◽  
Taehun Park ◽  
Sang Jung Ahn ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Three Dimensional ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Networks
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