High thermoelectric performance of n-type Bi2Te2.7Se0.3via nanostructure engineering

2018 ◽  
Vol 6 (20) ◽  
pp. 9642-9649 ◽  
Author(s):  
D. Li ◽  
J. M. Li ◽  
J. C. Li ◽  
Y. S. Wang ◽  
J. Zhang ◽  
...  
Keyword(s):  
Thermoelectric Material ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Commercial Applications ◽  
P Type

BiSbTe has been realized as an ideal p-type thermoelectric material near room temperature; however, its commercial applications are largely restricted by its n-type counterpart that exhibits relatively inferior thermoelectric performance.

High thermoelectric performance from optimization of hole-doped CuInTe2

2016 ◽  
Vol 18 (8) ◽  
pp. 5925-5931 ◽  
Author(s):  
Gang Zhou ◽  
Dong Wang
Keyword(s):  
Thermoelectric Material ◽  
Thermoelectric Performance ◽  
P Type

p-Type CuInTe2 is predicted to be a promising thermoelectric material at medium temperatures by optimization of doping at the In-site.

scholarly journals Enhanced room-temperature thermoelectric performance of p-type BiSbTe by reducing carrier concentration

RSC Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 2252-2257 ◽  
Author(s):  
Zichen Wei ◽  
Yang Yang ◽  
Chenyang Wang ◽  
Zhili Li ◽  
Lixian Zheng ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Alloy Effect ◽  
Ti Substitution ◽  
P Type

Ti substitution leads to enhanced thermoelectric performance of p-type Bi0.5Sb1.5Te3 due to carrier concentration regulation, alloy effect and anisotropic microstructure.

The effect of doping on thermoelectric performance of p-type SnSe: Promising thermoelectric material

2016 ◽  
Vol 668 ◽  
pp. 152-158 ◽  
Author(s):  
Niraj Kumar Singh ◽  
Sivaiah Bathula ◽  
Bhasker Gahtori ◽  
Kriti Tyagi ◽  
D. Haranath ◽  
...  
Keyword(s):  
Thermoelectric Material ◽  
Thermoelectric Performance ◽  
P Type ◽  
Effect Of Doping

scholarly journals Optimal Carrier Concentration for High Thermoelectric Performance of Lead Substituted Bismuth Telluride in p-Type Doping

2018 ◽  
Vol 28 (2) ◽  
pp. 169
Author(s):  
Van Quang Tran
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Materials ◽  
Density Functional ◽  
Room Temperature ◽  
Density Functional Theory Calculation ◽  
Binary Compound ◽  
Thermoelectric Performance ◽  
Boltzmann Transport ◽  
Relaxation Time Approximation ◽  
P Type

Bi\(_{2}\)Te\(_{3}\) and its alloys are the well-known state-of-the-art thermoelectric materials operating at around room temperature. With lead substituted, the newly formed quasi-binary compound PbBi\(_{4}\)Te\(_{7}\), shows relatively high electrical conductivity and Seebeck coefficient. In this report, we employed the solution of the Boltzmann Transport Equation in a constant relaxation-time approximation within a first-principles density-functional-theory calculation to explore the role of the electronic thermal conductivity, \(\kappa _{e}\), on the thermoelectric performance of the compound with p-type doping. Results show that \(\kappa _{e}\) increases drastically with the increases of both temperature and carrier concentration. Even the power factor has been found to be markedly improved with the increase of the carrier concentration, a rapid increase of \(\kappa _{e}\) emerges as a big hindrance to improve the dimensionless figure of merit, ZT, of the compound. This is responsible for the limit of ZT. The larger ZT is found in low temperatures and carrier concentrations. The highest ZT of about 0.48 occurs at 223 K and at the carrier concentration of \(6\times 10^{17}\)cm\(^{ - 3}\). At room temperature the maximum ZT is slightly smaller. We demonstrated that at a particular temperature to maximize the thermoelectric performance of the compound, the carrier concentration must be optimized. Results show that the compound with p-type doping is a promising thermoelectric materials operating at around room temperature.

scholarly journals Electronic quality factor for thermoelectrics

2020 ◽  
Vol 6 (46) ◽  
pp. eabc0726 ◽  
Author(s):  
Xinyue Zhang ◽  
Zhonglin Bu ◽  
Xuemin Shi ◽  
Zhiwei Chen ◽  
Siqi Lin ◽  
...  
Keyword(s):  
Quality Factor ◽  
Room Temperature ◽  
State Of The Art ◽  
Universal Curve ◽  
Trial And Error ◽  
Single Measurement ◽  
Thermoelectric Power Factor ◽  
Commercial Applications ◽  
P Type ◽  
Single Material

Development of thermoelectrics usually involves trial-and-error investigations, including time-consuming synthesis and measurements. Here, we identify the electronic quality factor BE for determining the maximum thermoelectric power factor, which can be conveniently estimated by a single measurement of Seebeck coefficient and electrical conductivity of only one sample, not necessarily optimized, at an arbitrary temperature. We demonstrate that thousands of experimental measurements in dozens of materials can all be described by a universal curve and a single material parameter BE for each class of materials. Furthermore, any deviation in BE with temperature or doping indicated new effects such as band convergence or additional scattering. This makes BE a powerful tool for evaluating and guiding the development of thermoelectrics. We demonstrate the power of BE to show both p-type GeTe alloys and n-type Mg3SbBi alloys as highly competitive materials, at near room temperature, to state-of-the-art Bi2Te3 alloys used in nearly all commercial applications.

scholarly journals Localized double phonon scattering and DOS induced thermoelectric enhancement of degenerate nonstoichiometric Li1−xNbO2 compounds

RSC Advances ◽  
2017 ◽  
Vol 7 (84) ◽  
pp. 53255-53264 ◽  
Author(s):  
Jamil Ur Rahman ◽  
Nguyen Van Du ◽  
Gul Rahman ◽  
V. M. García-Suárez ◽  
Won-Seon Seo ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Significant Role ◽  
Phonon Scattering ◽  
Thermoelectric Performance ◽  
Oxide Thermoelectric Material ◽  
P Type

We report the synthesis and thermoelectric properties of a new p-type oxide thermoelectric material (Li1−xNbO2, with x = 0–0.6), in which Li-vacancies play a significant role in the enhancement of the thermoelectric performance.

Cobalt-doping in Cu2SnS3: enhanced thermoelectric performance by synergy of phase transition and band structure modification

2017 ◽  
Vol 5 (44) ◽  
pp. 23267-23275 ◽  
Author(s):  
Huiwen Zhao ◽  
Xiaoxuan Xu ◽  
Chao Li ◽  
Ruoming Tian ◽  
Ruizhi Zhang ◽  
...  
Keyword(s):  
Phase Transition ◽  
Band Structure ◽  
Thermoelectric Material ◽  
Thermoelectric Performance ◽  
Cobalt Doping ◽  
Structure Modification ◽  
Ternary Sulfide ◽  
P Type

Mohite-type ternary sulfide Cu2SnS3, which has been intensively studied in the photovoltaic field, has recently attracted much attention as an outstanding p-type eco-friendly thermoelectric material.

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