The Effect of Mixed Doping on the Microstructure and Electrophysical Parameters of the Multicomponent PZT-Type Ceramics

This work shows the influence of admixture on the basic properties of the multicomponent PbZr1−xTixO3 (PZT)-type ceramics. It presents the results of four compositions of PZT-type material with the general chemical formula, Pb0.99M0.01((Zr0.49Ti0.51)0.95Mn0.021Sb0.016W0.013)0.9975O3, where, in the M position, a donor admixture was introduced, i.e., samarium (Sm3+), gadolinium (Gd3+), dysprosium (Dy3+) or lanthanum (La3+). The compositions of the PZT-type ceramics were obtained through the classic ceramic method, as a result of the synthesis of simple oxides. The X-ray diffraction (XRD) pattern studies showed that the obtained multicomponent PZT materials have a tetragonal structure with a P4mm point group. The microstructure of the obtained compositions is characterized by a well crystallized grain, with clearly visible grain boundaries. The composition with the admixture of lanthanum has the highest uniformity of fine grain microstructure, which positively affects its final dielectric and piezoelectric properties. In the multicomponent PZT-type ceramic, materials utilize the mixed (acceptor and donor) doping of the main compound. This dopiong method has a positive effect on the set of the electrophysical parameters of ceramic materials. Donor dopants W6+ (at positions B) and M3+ = Sm3+, Gd3+, Dy3+, and La3+ (at positions A) increase the dielectric and piezoelectric properties, while the acceptor dopant Sb3+ (at positions B) increases the time and temperature stability of the electrophysical parameters. In addition, the suitable selection of the set of admixtures improved the sinterability of the ceramic samples, as well as resulted in obtaining the required material with good piezoelectric parameters for the poling process. This research confirms that all ceramic compositions have a set of parameters suitable for applications in micromechatronics, for example, as actuators, piezoelectric transducers, and precision microswitches.

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-k dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10−6 A/mm can be achieved for the acceptor dopant concentration at the level of 5 X 1015 cm−3. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.