Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

2018 ◽  
Vol 112 (22) ◽  
pp. 222903 ◽  
Author(s):  
T. Ali ◽  
P. Polakowski ◽  
S. Riedel ◽  
T. Büttner ◽  
T. Kämpfe ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
Device Physics ◽  
Silicon Doped ◽  
Material Relation

Etching of Zirconium Oxide, Hafnium Oxide, and Hafnium Silicates in Dilute Hydrofluoric Acid Solutions

2004 ◽  
Vol 19 (4) ◽  
pp. 1149-1156 ◽  
Author(s):  
Viral Lowalekar ◽  
Srini Raghavan
Keyword(s):  
Hydrofluoric Acid ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
High Dielectric Constant ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Heat Treated ◽  
Paper Work ◽  
High Dielectric ◽  
Work Done

Oxides and silicates of zirconium and hafnium are actively being considered and tested to replace SiO2 as the gate material. Though these materials have the high-dielectric constant (k ∼ 20–25) needed to provide a larger equivalent oxide thickness, they are very refractory and difficult to etch by wet and dry methods. In this paper, work done on wet etching of ZrO2, HfO2, and HfSixOy in dilute hydrofluoric acid (HF) solutions is presented and discussed. Experiments were done on various high-k films deposited by metalorganic chemical vapor deposition. It was found that the as-deposited high-k films can be dissolved with a good selectivity over SiO2 in dilute HF solutions, but heat-treated high-k films are difficult to etch with good selectivity over SiO2 under the same conditions.

Phase transitions in ferroelectric silicon doped hafnium oxide

2011 ◽  
Vol 99 (11) ◽  
pp. 112904 ◽  
Author(s):  
T. S. Böscke ◽  
St. Teichert ◽  
D. Bräuhaus ◽  
J. Müller ◽  
U. Schröder ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Hafnium Oxide ◽  
Silicon Doped

Adsorption of Moisture and Organic Contaminants on Hafnium Oxide, Zirconium Oxide, and Silicon Oxide Gate Dielectrics

2003 ◽  
Vol 150 (10) ◽  
pp. F186 ◽  
Author(s):  
Prashant Raghu ◽  
Niraj Rana ◽  
Chris Yim ◽  
Eric Shero ◽  
Farhang Shadman
Keyword(s):  
Organic Contaminants ◽  
Zirconium Oxide ◽  
Hafnium Oxide ◽  
Silicon Oxide ◽  
Gate Dielectrics

scholarly journals Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Temperature Scaling ◽  
Silicon Doped

Investigation of Switching Characteristics for Silicon Doped Hafnium Oxide FeFET

2018 ◽  
Author(s):  
T. Ali ◽  
P. Polakowski ◽  
S. Riedel ◽  
T. Büttner ◽  
T. Kämpfe ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Switching Characteristics ◽  
Silicon Doped

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 9 (10) ◽  
pp. 589-593 ◽  
Author(s):  
Yan Guan ◽  
Dayu Zhou ◽  
Jin Xu ◽  
Xiaohua Liu ◽  
Fei Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Rayleigh Law ◽  
Silicon Doped
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