Phase transitions in ferroelectric silicon doped hafnium oxide

2011 ◽  
Vol 99 (11) ◽  
pp. 112904 ◽  
Author(s):  
T. S. Böscke ◽  
St. Teichert ◽  
D. Bräuhaus ◽  
J. Müller ◽  
U. Schröder ◽  
...  
APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 051120
Author(s):  
Clemens Mart ◽  
Thomas Kämpfe ◽  
Kati Kühnel ◽  
Malte Czernohorsky ◽  
Sabine Kolodinski ◽  
...  

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  

2018 ◽  
Author(s):  
T. Ali ◽  
P. Polakowski ◽  
S. Riedel ◽  
T. Büttner ◽  
T. Kämpfe ◽  
...  

2015 ◽  
Vol 9 (10) ◽  
pp. 589-593 ◽  
Author(s):  
Yan Guan ◽  
Dayu Zhou ◽  
Jin Xu ◽  
Xiaohua Liu ◽  
Fei Cao ◽  
...  

2012 ◽  
Vol 100 (8) ◽  
pp. 082905 ◽  
Author(s):  
J. Müller ◽  
S. Knebel ◽  
D. Bräuhaus ◽  
U. Schröder

MRS Advances ◽  
2021 ◽  
Author(s):  
Maximilian Lederer ◽  
Konstantin Mertens ◽  
Alireza M. Kia ◽  
Jennifer Emara ◽  
Ricardo Olivo ◽  
...  

Abstract Reliability is a central aspect of hafnium oxide-based ferroelectric field effect transistors (FeFETs), which are promising candidates for embedded non-volatile memories. Besides the device performance, understanding the evolution of the ferroelectric behaviour of hafnium oxide over its lifetime in FeFETs is of major importance for further improvements. Here, we present the impact of the interface layer in FeFETs on the cycling behaviour and retention of ferroelectric silicon-doped hafnium oxide. Thicker interfaces are demonstrated to reduce the presence of antiferroelectric-like wake-up effects and to improve endurance. However, they show a strong destabilisation of one polarisation state in terms of retention. In addition, measurements of the Preisach density revealed additional insight in the wake-up effect of these metal-ferroelectric-insulator-semiconductor (MFIS) capacitors. Graphic abstract


2018 ◽  
Vol 113 (12) ◽  
pp. 122901 ◽  
Author(s):  
C. Mart ◽  
M. Czernohorsky ◽  
S. Zybell ◽  
T. Kämpfe ◽  
W. Weinreich

2018 ◽  
Vol 2 (12) ◽  
Author(s):  
Shishir Pandya ◽  
Gabriel Velarde ◽  
Lei Zhang ◽  
Lane W. Martin

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