scholarly journals Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

2020 ◽  
Vol 41 (12) ◽  
pp. 1754-1757
Author(s):  
Filip Wach ◽  
Michael J. Uren ◽  
Benoit Bakeroot ◽  
Ming Zhao ◽  
Stefaan Decoutere ◽  
...  
Keyword(s):  
Charge Transport ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Buffer Layers ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Low Field ◽  
Gan On Si

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

2012 ◽  
Vol 5 (3) ◽  
pp. 034103
Author(s):  
Farid Medjdoub ◽  
Damien Ducatteau ◽  
Malek Zegaoui ◽  
Bertrand Grimbert ◽  
Nathalie Rolland ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Confinement ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Trapping Effects

Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz

2019 ◽  
Vol 12 (12) ◽  
pp. 126506 ◽  
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Yu Gao ◽  
Kumud Ranjan ◽  
Kenneth E. Lee ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan On Si
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