Negative differential resistance in nickel octabutoxy phthalocyanine and nickel octabutoxy phthalocyanine/graphene oxide ultrathin films

2018 ◽  
Vol 123 (15) ◽  
pp. 155501 ◽  
Author(s):  
Arup Sarkar ◽  
K. A. Suresh
Keyword(s):  
Graphene Oxide ◽  
Ultrathin Films ◽  
Negative Differential Resistance ◽  
Differential Resistance

scholarly journals Observation of negative differential resistance in mesoscopic graphene oxide devices

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Servin Rathi ◽  
Inyeal Lee ◽  
Moonshik Kang ◽  
Dongsuk Lim ◽  
Yoontae Lee ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Negative Differential Resistance ◽  
Differential Resistance

Negative Differential Resistance of Graphene Oxide/Sulphur Compound

2021 ◽  
Vol 67 ◽  
pp. 25-31
Author(s):  
Sophia R. Figarova ◽  
Elvin M. Aliyev ◽  
Rashad G. Abaszade ◽  
R.I. Alekberov ◽  
Vagif R. Figarov
Keyword(s):  
Graphene Oxide ◽  
Functional Groups ◽  
Negative Differential Resistance ◽  
Characteristic Curve ◽  
Differential Resistance ◽  
Localized States ◽  
Sulphur Compound ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
Current Voltage Characteristics

Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy images. The current-voltage characteristics of the samples were measured in air at room temperature. In the I - V characteristic curve of graphene oxide/sulphur compound with the ratio of oxygen to carbon of 3.54 and that to sulphur of 42.54, negative differential resistance was observed. The negative differential resistance is attributed to current carrier transitions between the localized states formed by functional groups.

Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit

2013 ◽  
Vol 113 (3) ◽  
pp. 034308 ◽  
Author(s):  
R. Batabyal ◽  
A. H. M. Abdul Wasey ◽  
J. C. Mahato ◽  
Debolina Das ◽  
A. Roy ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Negative Differential Resistance ◽  
Electron Tunneling ◽  
Differential Resistance ◽  
Two Dimensional

Aggregation-induced negative differential resistance in graphene oxide quantum dots

2021 ◽  
Author(s):  
Sonia Sharma ◽  
Chieh-An Cheng ◽  
Svette Reina Merden Santiago ◽  
Denice N. Feria ◽  
Chi-Tsu Yuan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Analog To Digital Converters ◽  
Memory Devices ◽  
Analog To Digital ◽  
Potential Applications ◽  
Graphene Oxide Quantum Dots

Negative differential resistance (NDR) devices have attracted considerable interest due to their potential applications in switches, memory devices, and analog-to-digital converters.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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