Aggregation-induced negative differential resistance in graphene oxide quantum dots

2021 ◽  
Author(s):  
Sonia Sharma ◽  
Chieh-An Cheng ◽  
Svette Reina Merden Santiago ◽  
Denice N. Feria ◽  
Chi-Tsu Yuan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Analog To Digital Converters ◽  
Memory Devices ◽  
Analog To Digital ◽  
Potential Applications ◽  
Graphene Oxide Quantum Dots

Negative differential resistance (NDR) devices have attracted considerable interest due to their potential applications in switches, memory devices, and analog-to-digital converters.

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Strain-induced negative differential resistance in ultrasmall carbon nanotube

2017 ◽  
Vol 31 (23) ◽  
pp. 1750217
Author(s):  
Hui Fang ◽  
Fei-Peng Zhang ◽  
Xing-Xiang Ruan ◽  
Can-Sheng Huang ◽  
Zhi-Nian Jiang ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Transport Properties ◽  
Negative Differential Resistance ◽  
Tensile Strain ◽  
Differential Resistance ◽  
Single Wall Carbon Nanotubes ◽  
Memory Devices ◽  
Fast Switching ◽  
Potential Applications

The transport properties in ultrasmall single-wall carbon nanotubes (SWCNTs) under tensile strain have been theoretically investigated. The regular negative differential resistance (NDR) induced by the strain undergoes a process from enhancement to weakening in the zigzag (3,[Formula: see text]0) SWCNT. The NDR achieves maximum with applying 4% tensile strain. Compared to the case of (3,[Formula: see text]0) SWCNT, that NDR cannot be manipulated by applying strain clearly in (4,[Formula: see text]0) and (5,[Formula: see text]0) ultrasmall SWCNTs with tensile strain lower than 10%. It proposes this strain-induced NDR effect to demonstrate the possibility of finding potential applications in SWCNT-based NDR nanodevices such as in memory devices, oscillators and fast switching devices.

Heterogeneity in the fluorescence of graphene and graphene oxide quantum dots

2017 ◽  
Vol 184 (3) ◽  
pp. 871-878 ◽  
Author(s):  
Siobhan J. Bradley ◽  
Renee Kroon ◽  
Geoffry Laufersky ◽  
Magnus Röding ◽  
Renee V. Goreham ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Graphene Oxide Quantum Dots

scholarly journals Observation of negative differential resistance in mesoscopic graphene oxide devices

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Servin Rathi ◽  
Inyeal Lee ◽  
Moonshik Kang ◽  
Dongsuk Lim ◽  
Yoontae Lee ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Negative Differential Resistance ◽  
Differential Resistance
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