Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit

2013 ◽  
Vol 113 (3) ◽  
pp. 034308 ◽  
Author(s):  
R. Batabyal ◽  
A. H. M. Abdul Wasey ◽  
J. C. Mahato ◽  
Debolina Das ◽  
A. Roy ◽  
...  
2013 ◽  
Vol 113 (20) ◽  
pp. 203109 ◽  
Author(s):  
X. G. Guo ◽  
L. L. Gu ◽  
M. Dong ◽  
J. C. Cao ◽  
H. C. Liu ◽  
...  

2018 ◽  
Vol 20 (46) ◽  
pp. 29440-29445 ◽  
Author(s):  
Shenghui Zhang ◽  
Yiqun Xie ◽  
Yibin Hu ◽  
Xiaobin Niu ◽  
Yin Wang

Fully spin-polarized current and negative differential resistance (NDR) are two important electronic transport properties for spintronic nanodevices based on two-dimensional materials.


2020 ◽  
Vol 22 (4) ◽  
pp. 2098-2104
Author(s):  
Neelam Shivran ◽  
Shankar P. Koiry ◽  
Chiranjib Majumder ◽  
Anil K. Chauhan ◽  
Dinesh K. Aswal ◽  
...  

Using simple surface chemistry, rectification characteristics can be tuned to reproducible negative differential resistance (NDR) with a very high peak-to-valley ratio (PVR) up to 1000 in BODIPY grafted on Si.


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