Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition

2018 ◽  
Vol 112 (9) ◽  
pp. 093501 ◽  
Author(s):  
Jesus Avila-Avendano ◽  
Manuel Quevedo-Lopez ◽  
Chadwin Young
1991 ◽  
Vol 235 ◽  
Author(s):  
J. A. Knapp

ABSTRACTA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.


2010 ◽  
Author(s):  
K. Rodrigo ◽  
S. Heiroth ◽  
M. Lundberg ◽  
N. Bonanos ◽  
K. Mohan Kant ◽  
...  

2015 ◽  
Vol 70 (1) ◽  
pp. 10102
Author(s):  
Simeon Simeonov ◽  
Silvia Bakalova ◽  
Anna Szekeres ◽  
Ivaylo Minkov ◽  
Gabriel Socol ◽  
...  

1991 ◽  
Vol 236 ◽  
Author(s):  
J. A. Knapp

AbstractA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.


2013 ◽  
Vol 860-863 ◽  
pp. 807-811
Author(s):  
Wen De Liu ◽  
Zhen Feng Kang ◽  
Qiang Li ◽  
Ping Ping Zheng ◽  
Tie Zhu Ding

This study is focused on the elaboration of 8 mol.% yttria stabilized zirconia (YSZ) thin films onto porous supporting NiOYSZ anode substrates using pulsed laser deposition (PLD),and their microstructural and electrical characterizations. Better crystallinity and grain connectivity is observed increasing the deposition temperature until best values are obtained at 500°C. The greater relative conductivity enhancement is found at 300-500°C. The observed an increased conductivity at lower temperatures may be caused by a combination of nanoscaled effect of the YSZ thin film and interfacial effects between YSZ thin film and substrate.


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