Electrical characterization of Cr Schottky contacts on undoped and Ni-doped p-ZnO films grown by pulsed laser deposition on Si (100) substrates

2013 ◽  
Vol 104 ◽  
pp. 95-99 ◽  
Author(s):  
M. Stamataki ◽  
D. Tsamakis ◽  
J.P. Xanthakis ◽  
H.A. Ali ◽  
S. Esmaili-Sardari ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Laser Deposition ◽  
Zno Films

Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition

2009 ◽  
Vol 67 ◽  
pp. 127-130 ◽  
Author(s):  
Majumdar Sayanee ◽  
Banerji Pallab
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Films ◽  
Group V ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
P Type

In the present study we have used urea as the source for doping nitrogen in ZnO since the most successful acceptor type dopant is the group V element like nitrogen. The nitrogen doped ZnO films have been deposited on glass substrates using Pulsed Laser Deposition technique using 248 nm KrF laser at energy 300 mJ by varying the number of laser pulses with a repetition rate of 10 pulse/sec in vacuum (10-6 mbar) at a constant temperature of 300 °C. The XRD pattern confirms the formation of wurtzite structure of ZnO, which is polycrystalline in nature. We have also performed UV absorption spectroscopy and the band gap is found to be 3.4 eV. Resistivity of the film increases with the increase of thickness for the undoped ZnO samples where the carrier concentrations are found to be of the order of 1017 cm-3. The mobility of the as-grown film is found to be 24.9 cm2/V-s. After doping with nitrogen the carrier concentration drops to the order of 1015 cm-3 and the mobility becomes 1.5 cm2/V-s. The mobility slightly varies with thickness. The resistivity increases to 1.3 KΩ-cm and the film shows p-type behavior. The results are explained on the basis of the available theory.

Electrical characterization of gadolinia doped ceria films grown by pulsed laser deposition

2010 ◽  
Author(s):  
K. Rodrigo ◽  
S. Heiroth ◽  
M. Lundberg ◽  
N. Bonanos ◽  
K. Mohan Kant ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Laser Deposition ◽  
Doped Ceria

Electrical characterization of Si doped AlN films synthesized by pulsed laser deposition

2015 ◽  
Vol 70 (1) ◽  
pp. 10102
Author(s):  
Simeon Simeonov ◽  
Silvia Bakalova ◽  
Anna Szekeres ◽  
Ivaylo Minkov ◽  
Gabriel Socol ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Laser Deposition ◽  
Si Doped

Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

2005 ◽  
Vol 244 (1-4) ◽  
pp. 377-380 ◽  
Author(s):  
Z.Q. Chen ◽  
S. Yamamoto ◽  
A. Kawasuso ◽  
Y. Xu ◽  
T. Sekiguchi
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films

Electrical Characterization of YSZ/YSZ-NiO Grown by Pulsed Laser Deposition for Low Temperature Solid Oxide Fuel Cells

2013 ◽  
Vol 860-863 ◽  
pp. 807-811
Author(s):  
Wen De Liu ◽  
Zhen Feng Kang ◽  
Qiang Li ◽  
Ping Ping Zheng ◽  
Tie Zhu Ding
Keyword(s):  
Thin Film ◽  
Solid Oxide Fuel Cells ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Laser Deposition ◽  
Conductivity Enhancement ◽  
Ysz Thin Film ◽  
Electrical Characterizations

This study is focused on the elaboration of 8 mol.% yttria stabilized zirconia (YSZ) thin films onto porous supporting NiOYSZ anode substrates using pulsed laser deposition (PLD),and their microstructural and electrical characterizations. Better crystallinity and grain connectivity is observed increasing the deposition temperature until best values are obtained at 500°C. The greater relative conductivity enhancement is found at 300-500°C. The observed an increased conductivity at lower temperatures may be caused by a combination of nanoscaled effect of the YSZ thin film and interfacial effects between YSZ thin film and substrate.

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