scholarly journals Three-dimensional steady and transient fully coupled electro-thermal simulation of AlGaN/GaN high electron mobility transistors: Effects of lateral heat dissipation and thermal crosstalk between gate fingers

AIP Advances ◽  
2017 ◽  
Vol 7 (9) ◽  
pp. 095304 ◽  
Author(s):  
Ashu Wang ◽  
Lingyan Zeng ◽  
Wen Wang
Keyword(s):  
Electron Mobility ◽  
Heat Dissipation ◽  
Three Dimensional ◽  
High Electron Mobility Transistors ◽  
Thermal Simulation ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Fully Coupled ◽  
Lateral Heat
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