A scalable electrothermal model using a three‐dimensional thermal analysis model for GaN‐on‐diamond high‐electron‐mobility transistors

2021 ◽  
Author(s):  
Youda Li ◽  
Shuman Mao ◽  
Yu Fu ◽  
Ruiming Xu ◽  
Bo Yan ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Electron Mobility ◽  
Three Dimensional ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Analysis Model ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene

2018 ◽  
Vol 18 (11) ◽  
pp. 7578-7583
Author(s):  
Guobin Zhang ◽  
Miao Zhao ◽  
Chunli Yan ◽  
Bing Sun ◽  
Zonggang Wu ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy

2013 ◽  
Vol 291 ◽  
pp. 104-109 ◽  
Author(s):  
Miao Zhao ◽  
Xinyu Liu ◽  
Yingkui Zheng ◽  
Mingzeng Peng ◽  
Sihua Ouyang ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Infrared Microscopy ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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