Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate-transfer technique

2017 ◽  
Vol 214 (8) ◽  
Author(s):  
Masanobu Hiroki ◽  
Kazuhide Kumakura ◽  
Hideki Yamamoto
Keyword(s):  
Electron Mobility ◽  
Heat Dissipation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Substrate Transfer

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

2014 ◽  
Vol 105 (19) ◽  
pp. 193509 ◽  
Author(s):  
Masanobu Hiroki ◽  
Kazuhide Kumakura ◽  
Yasuyuki Kobayashi ◽  
Tetsuya Akasaka ◽  
Toshiki Makimoto ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Heating Effect ◽  
High Electron Mobility ◽  
Self Heating ◽  
Electron Mobility Transistors ◽  
Substrate Transfer

scholarly journals The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 570
Author(s):  
H.Y. Wang ◽  
H.C. Chiu ◽  
W.C. Hsu ◽  
C.M. Liu ◽  
C.Y. Chuang ◽  
...  
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Heat Dissipation ◽  
Surface Defects ◽  
Lattice Mismatch ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following an increase of the Al mole fraction due to the enhancement of the back barrier height. Increasing the AlGaN thickness deteriorated device performance because of the generation of lattice mismatch induced surface defects. The dynamic on-resistance (RON) measurements indicated that the Al mole fraction and thickness of the B.B. both affected the buffer trapping phenomenon. In addition, the thickness of B.B. also influenced the substrate heat dissipation ability which is also a key index for high power RF device applications.

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