Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

2014 ◽  
Vol 32 (6) ◽  
pp. 061202 ◽  
Author(s):  
Ya-Hsi Hwang ◽  
Tsung-Sheng Kang ◽  
Fan Ren ◽  
Stephen J. Pearton
Keyword(s):  
Electron Mobility ◽  
Heat Dissipation ◽  
High Electron Mobility Transistors ◽  
Active Area ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Novel Approach

scholarly journals The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 570
Author(s):  
H.Y. Wang ◽  
H.C. Chiu ◽  
W.C. Hsu ◽  
C.M. Liu ◽  
C.Y. Chuang ◽  
...  
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Heat Dissipation ◽  
Surface Defects ◽  
Lattice Mismatch ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following an increase of the Al mole fraction due to the enhancement of the back barrier height. Increasing the AlGaN thickness deteriorated device performance because of the generation of lattice mismatch induced surface defects. The dynamic on-resistance (RON) measurements indicated that the Al mole fraction and thickness of the B.B. both affected the buffer trapping phenomenon. In addition, the thickness of B.B. also influenced the substrate heat dissipation ability which is also a key index for high power RF device applications.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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