Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors

2017 ◽  
Vol 111 (20) ◽  
pp. 202904
Author(s):  
Takamasa Kawanago ◽  
Ryo Ikoma ◽  
Tomoaki Oba ◽  
Hiroyuki Takagi
Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  

Author(s):  
Ming Chu ◽  
Jie Zhang ◽  
Xingwei Zeng ◽  
Zefeng Chen ◽  
Danqing Liu ◽  
...  

Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...


2014 ◽  
Vol 104 (8) ◽  
pp. 083106 ◽  
Author(s):  
A. Sanne ◽  
H. C. P. Movva ◽  
S. Kang ◽  
C. McClellan ◽  
C. M. Corbet ◽  
...  

2020 ◽  
Vol 6 (9) ◽  
pp. 2000515
Author(s):  
Baolin Zhao ◽  
Bastian Gothe ◽  
Marco Sarcletti ◽  
Yuhan Zhao ◽  
Tobias Rejek ◽  
...  

2015 ◽  
Vol 3 (6) ◽  
pp. 1181-1186 ◽  
Author(s):  
T. V. A. G. de Oliveira ◽  
A. Eleta ◽  
L. E. Hueso ◽  
A. M. Bittner

Highly insulating gate dielectrics based on AlOx and on mixed phosphonic-acid SAMs terminated with methyl/carboxylic acid groups are demonstrated.


2011 ◽  
Vol 13 (32) ◽  
pp. 14387 ◽  
Author(s):  
Florian Colléaux ◽  
James M. Ball ◽  
Paul H. Wöbkenberg ◽  
Peter J. Hotchkiss ◽  
Seth R. Marder ◽  
...  

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