Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

2016 ◽  
Vol 108 (4) ◽  
pp. 041605 ◽  
Author(s):  
Takamasa Kawanago ◽  
Shunri Oda
2015 ◽  
Vol 3 (6) ◽  
pp. 1181-1186 ◽  
Author(s):  
T. V. A. G. de Oliveira ◽  
A. Eleta ◽  
L. E. Hueso ◽  
A. M. Bittner

Highly insulating gate dielectrics based on AlOx and on mixed phosphonic-acid SAMs terminated with methyl/carboxylic acid groups are demonstrated.


Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  

Author(s):  
Ming Chu ◽  
Jie Zhang ◽  
Xingwei Zeng ◽  
Zefeng Chen ◽  
Danqing Liu ◽  
...  

Molecules of 12-o-carboranyldodecylphosphonic acid form a novel self-assembled monolayer (SAM) on alumina, which can effectively tune charge carriers in organic field effect transistors (OFETs) with the assembled dipoles of o−carborane...


2020 ◽  
Vol 6 (9) ◽  
pp. 2000515
Author(s):  
Baolin Zhao ◽  
Bastian Gothe ◽  
Marco Sarcletti ◽  
Yuhan Zhao ◽  
Tobias Rejek ◽  
...  

2011 ◽  
Vol 13 (32) ◽  
pp. 14387 ◽  
Author(s):  
Florian Colléaux ◽  
James M. Ball ◽  
Paul H. Wöbkenberg ◽  
Peter J. Hotchkiss ◽  
Seth R. Marder ◽  
...  

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