Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors
2015 ◽
Vol 3
(6)
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pp. 1181-1186
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Keyword(s):
Keyword(s):
2011 ◽
Vol 13
(32)
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pp. 14387
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2015 ◽
Vol 25
(33)
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pp. 5376-5383
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