Low resistivity of graphene nanoribbons with zigzag-dominated edge fabricated by hydrogen plasma etching combined with Zn/HCl pretreatment

2017 ◽  
Vol 111 (20) ◽  
pp. 203102 ◽  
Author(s):  
Fengkui Liu ◽  
Qi Li ◽  
Rubing Wang ◽  
Jianbao Xu ◽  
Junxiong Hu ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Graphene Nanoribbons ◽  
Hydrogen Plasma ◽  
Low Resistivity

A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

2002 ◽  
Vol 722 ◽  
Author(s):  
Maria Losurdo ◽  
MariaMichela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Gon Namkoong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Dry Etching ◽  
Surface Reactivity ◽  
Wet Etching ◽  
Hydrogen Treatment

AbstractThe use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.

Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy

2000 ◽  
Vol 88 (10) ◽  
pp. 5597-5604 ◽  
Author(s):  
P. Reinke ◽  
P. Oelhafen ◽  
H. Feldermann ◽  
C. Ronning ◽  
H. Hofsäss
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
In Situ Investigation

Hydrogen plasma etching mechanism at the a-C:H/a-SiCx:H interface: A key factor for a-C:H adhesion

2018 ◽  
Vol 455 ◽  
pp. 1179-1184 ◽  
Author(s):  
Leonardo M. Leidens ◽  
Ângela E. Crespi ◽  
Carla D. Boeira ◽  
Fernando G. Echeverrigaray ◽  
Carlos A. Figueroa
Keyword(s):  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Etching Mechanism ◽  
Key Factor

scholarly journals Hexagonal Nanopits with the Zigzag Edge State on Graphite Surfaces Synthesized by Hydrogen-Plasma Etching

2019 ◽  
Vol 123 (36) ◽  
pp. 22665-22673 ◽  
Author(s):  
Tomohiro Matsui ◽  
Hideki Sato ◽  
Kazuma Kita ◽  
André E. B. Amend ◽  
Hiroshi Fukuyama
Keyword(s):  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Edge State ◽  
Zigzag Edge

Etching Properties of Hydrogenated Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
D. W. Baker ◽  
S.K Deb
Keyword(s):  
Amorphous Silicon ◽  
Plasma Etching ◽  
Hydrogen Content ◽  
Chemical Etching ◽  
Isopropyl Alcohol ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Hydrogenated Amorphous

ABSTRACTWe have studied wet-chemical and dry etching properties of doped and undoped hydrogenated amorphous silicon (a-Si:H) films with bonded hydrogen content varying from 0 to 20 at.%. Etching processes studied include (1) wet-chemical etching using solutions of KOH, isopropyl alcohol (IPA), and H2O, (2) hydrogen plasma etching, and (3) XeF2 vapor etching.

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